Broadband Dielectric Resonator Antenna With Metal Coating

A broadband dielectric resonator (DR) antenna is proposed, which consists of a rectangular DR coated with metal on three sides and placed on a ground plane. The structure is analyzed by modelling the dielectric-air interface as perfect magnetic conductor (PMC). A coplanar waveguide (CPW) with terminating slots is used to feed the antenna. Measurement results exhibit a wide bandwidth of about 47% over which the E_thetas pattern on the horizontal plane is nearly omnidirectional. The 10-dB bandwidth of this broadband DR monopole covers 4.2-6.8 GHz. Hence, it can be used for WLAN 802.11a applications     

Measurement of membrane rigidity on trapped unilamellar phospholipid vesicles by using differential confocal microscopy

We use optical tweezers to trap a unilamellar phospholipid vesicle and measure the out-of-plane thermal fluctuations by using differential confocal microscopy. Bending moduli of the lipid membranes are calculated directly from the mean-square values of the fluctuation amplitudes. Owing to the refractive index contrast between the inner and outer solutions of the vesicle, optical tweezers trap the vesicle laterally and improve the reliability of the measured fluctuation amplitudes along the optical axis. Bending moduli of membranes in gel or fluid phases obtained by the combination of differential confocal microscopy and optical tweezers are close to those reported previously. We also obtain the bending modulus of sphingomyelin membranes in the gel phase, which was not reported previously.     

Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

This paper reviews both static and dynamic characteristics of a planar-type Pd–GaN metal–semiconductor–metal (MSM) hydrogen sensor. The sensing mechanism of a metal–semiconductor (MS) hydrogen sensor was firstly reviewed to realize the sensing mechanism of the proposed sensor. Symmetrically bi-directional current–voltage characteristics associated with our sensor were indicative of easily integrating with other electrical/optical devices. In addition to the sensing current, the sensing voltage was also used as detecting signals in this work. With regard to sensing currents (sensing voltages), the proposed sensor was biased at a constant voltage (current) in a wide range of hydrogen concentration from 2.13 to 10,100 ppm H₂/N₂. Experimental results reveal that the proposed sensor exhibits effective barrier height variations (sensing responses) of 134 (173) and 20 mV (1) at 10,100 and 2.13 ppm H₂/N₂, respectively. A sensing voltage variation as large as 18 V was obtained at 10,100 ppm H₂/N₂, which is the highest value ever reported. If an accepted sensing voltage variation is larger than 3 (5) V, the detecting limit is 49.1 (98.9) ppm. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one. Other dynamic measurements by switching voltage polarity and/or continuously changing hydrogen concentration were addressed, showing the proposed sensor is a good candidate for commonly used MS sensors.     

Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of 4.84 × 10⁵% at 10,100 ppm and 8.7 × 10⁴% at 49.1 ppm H₂ in N₂. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H₂ in N₂. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one.