Do Warnings of Response Verification Moderate the Relationship Between Personality and Cognitive Ability?

This article presents the results of 2 studies that examine the effect of presenting a warning of response verification by others on the relationship between measures of personality and cognitive ability. In both a field study and a laboratory study, stronger correlations were generally found between measures of personality and cognitive ability when a warning of verification was present. The results from the studies also showed that the warning of verification was associated with slower item response latencies for certain personality scales, suggesting that exposure to the warning increased the complexity of the response decision. Results are discussed in terms of the effects of altering test instructions on the construct validity of personality measures used in applied settings. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Resonant response of a FET to an AC signal: influence of magnetic field, device length, and temperature

A theoretical investigation is made of the response of a field-effect transistor (FET) to an incoming electromagnetic radiation in the presence of a perpendicular, weak magnetic field. The influence of an external friction due to electron scattering by impurities and/or phonons, and of the internal friction due to electron-electron scattering, is taken into account. The treatment is valid for a nondegenerate electron gas in which the mean-free path for electron-electron scattering /spl lambda//sub ee/ is much smaller than the device length L and than the mean-free path due to collisions with impurities and/or phonons /spl lambda//sub coll/. These requirements, written as /spl lambda//sub ee//spl Lt/L/spl Lt//spl lambda//sub coll/, are fulfilled for magnetic fields sufficiently weak that Landau quantization is absent and the electron motion is described within the framework of hydrodynamics. It is demonstrated that a high-electron mobility transistor (HEMT), with a short (long) channel, yields a resonant (nonresonant) response to an ac signal induced by the incoming electromagnetic radiation at the plasma oscillation frequencies of the two-dimensional electrons in the device. Keeping the device length and temperature at control, an applied magnetic field can be tuned to achieve the desired effect on the response of the device. It is observed that the lower the temperature, i.e., the higher the mobility, the higher the responsivity of the device. Such response makes the FET a promising device for new types of sources, detectors, mixers, and multipliers. The HEMT-based devices should, in principle, operate at much higher frequencies than the conventional transit time-limited devices, since the plasma waves propagate much faster than electrons.     

An algorithm for the eigenvalues of a corner with mixed boundary conditions

Displacements and stresses near a corner with one side fixed and the other side free can be written as series expansions of eigenfunctions of the form r^λjf_j(γ). The same is true of a point on a smooth boundary with a sudden change of boundary conditions from free to fixed. The eigenvalues λ_j are in general complex numbers that are required in order of ascending real part. An algorithm is presented that computes any number of λ_j in order of ascending real part.     

Gradient-based Pareto front approximation applied to turbomachinery shape optimization

Engineering with Computers - Multi-objective optimization has been rising in popularity, especially within an industrial environment, where several cost functions often need to be considered during...