Design and fabrication of a piezoelectric transducer for wind-power generator

This study investigates the feasibility of a high-performance ZnO piezoelectric transducer for wind-power generation applications. The piezoelectric transducer is constructed of a Cu/ZnO/ITO/PET structure. Closely examining the ITO/PET substrate by a nano indenter reveals a low Young's modulus of 6.62 Gpa for specific deflections. The ZnO piezoelectric film of 965 nm is deposited on ITO/PET substrate using a RF magnetron sputtering system at room temperature. A copper layer is attached to the ZnO/ITO/PET structure to construct piezoelectric transducers. Both scanning electron microscopy and X-ray diffraction indicate that, among the favorable characteristic of the ZnO piezoelectric film include a rigid surface structure and a high c-axis preferred orientation. According to cantilever vibration theory, a transducer with a cantilever length of 9.9 mm and vibration area of 1.5 cm² is designed for natural wind. An appropriate mass loading of 0.57 g on the cantilever is critical for increasing the vibration amplitude and promoting the generated power of a piezoelectric transducer. Finally, an open circuit voltage of 1.87 V for the ZnO piezoelectric transducer at a vibration frequency of 100 Hz is obtained by an oscilloscope. After rectifying and filtering, the output power of the generator exhibits an available benefit of 0.07 μW/cm² with the load resistance of 5 MΩ.     

Highly sensitive mass sensor using film bulk acoustic resonator

Film bulk acoustic resonators (FBAR) have recently been adopted as alternatives to surface acoustic wave (SAW) in high frequency devices, due to their inherent advantages, such as low insertion loss, high power handling capability and small size. FBAR device can also be one of the standard components as mass sensor applications. FBAR sensors have high sensitivity, good linearity, low hysteresis and wide adaptability. In this study, a highly sensitive mass sensor using film bulk acoustic resonator was developed. The device structure of FBAR is simulated and designed by the Mason model, and fabricated using micro electromechanical systems (MEMS) processes. The fabricated FBAR sensor exhibits a resonant frequency of 2442.188 MHz, measured using an HP8720 network analyzer and a CASCADE probe station. Experimental results indicate that the mass loading effects agree with the simulated ones. Results of this study demonstrate that the sensitivity of the device can be achieved as high as 3654 Hz cm²/ng.     

Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers

We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al/sub 0.3/Ga/sub 0.7/N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al/sub 0.3/Ga/sub 0.7/N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al/sub 0.3/Ga/sub 0.7/N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.     

The properties of AlGaN films and AlGaN/GaN heterostructures grown on (11\bar{2}0) sapphire substrates

Al _x Ga_1-x N films and Al _x Ga_1-x N/GaN heterostructures were prepared on the ( ) sapphire substrates at elevated temperatures by alternate supply of trimethylgallium (TMG)/trimethylaluminum (TMA) and ammonia (NH₃) in an inductively heated quartz reactor. X-ray studies reveal the monocrystalline nature of these Al-containing structures. The results of absorption measurements of the Al _x Ga_1-x N films exhibit clear cut-off energies of the films. Based on the investigations of transmission electron microscopy (TEM), Al _x Ga_1-x N films and Al _x Ga_1-x N/GaN structures were found to deposit on the ( ) sapphire substrates with < 0001 > _AlGaN and being parallel to and , respectively.