Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

遥感卫星随遇接入互联网星座和在轨智能处理

低轨互联网星座是当前全球研究和发展的热点,互联网星座支持随遇接入遥感卫星和信息在轨直接处理的应用前景备受期待,但由于轨道高度不同会产生双向高动态异构星座的接入互联问题。首先,通过设定低轨卫星互联网星座在不同轨道特性、不同卫星数量情况下的随遇接入仿真场景,重点探讨了时空非连续可视性和多普勒频移问题对遥感卫星接入性能的影响;其次,基于遥感卫星随遇接入互联网星座场景的特点,分析了不同时延性在轨处理任务的流程及其星地功能分配;最后,对当前在轨智能处理算法存在的问题和未来研究重点进行阐述,为未来低轨互联网星座及遥感卫星的发展和联合组网应用提供可靠的理论支撑。     

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate...     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

矢量语音传感器微阵列

人工智能的普及促进了语音交互技术的发展,语音传感器阵列作为智能语音交互的硬件前端,成为语音交互领域的前沿研究方向.矢量语音传声器自有的偶极子指向性、零点深度以及阵列体积小便于集成的特点特别符合语音交互技术对硬件设备的要求.基于此,通过采用两组矢量敏感单元"共点正交"形成矢量微阵列实现声源空间锐化波束指向,其不受瑞利限与空间采样率限制,与传统空间离散分布的声压麦克风阵列有着本质区别,是矢量微阵列的核心优势所在.矢量微阵列传声器弥补了现有双麦阵列的不足,具有更为广阔的应用前景,作为智能语音交互的硬件前端,对推动智能语音交互领域的发展具有重要意义.     

Solution-Synthesized Multifunctional Janus Nanotree Microswimmer

Synthetic active matters are perfect model systems for non-equilibrium thermodynamics and of great potential for novel biomedical and environmental applications. However, most applications are limited by the complicated and low-yield preparation, while a scalable synthesis for highly functional microswimmers is highly desired. In this paper, an all-solution synthesis method is developed where the gold-loaded titania-silica nanotree can be produced as a multi-functional self-propulsion microswimmer. By applying light, heat, and electric field, the Janus nanotree demonstrated multi-mode self-propulsion, including photochemical self-electrophoresis by UV and visible light radiation, thermophoresis by near-infrared light radiation, and induced-charge electrophoresis under AC electric field. Due to the scalable synthesis, the Janus nanotree is further demonstrated as a high-efficiency, low-cost, active adsorbent for water decontamination, where the toxic mercury ions can be reclaimed with enhanced efficiency.     

BS960E高强钢激光-电弧复合焊接头氢脆行为研究

氢脆具有很强的微观组织敏感性,威胁着各类高强结构材料的安全服役.采用激光-电弧复合焊工艺对BS960E型高强钢进行焊接,并对接头在原位电化学充氢的条件下进行慢应变速率(10-5s-1)拉伸试验,结合微观组织和断裂特征进行分析并对接头的氢脆行为进行研究.结果 表明,焊接热循环所形成的富马氏体中的细晶区可以使接头表现出一定的氢脆敏感性,马氏体较大的氢扩散系数和较低的氢溶解度以及氢在晶界上的快速扩散是引起接头对氢脆敏感的主要原因,通过控制焊接工艺参数可抑制焊接热循环所引起的马氏体转变量,能够降低BS960E型高强钢激光-电弧复合焊接头的氢脆敏感性.     

Electrowetting-Assisted Generation of Ultrastable High Charge Densities in Composite Silicon Oxide–Fluoropolymer Electret Samples for Electric Nanogenerators

Electric nanogenerators that directly convert the energy of moving drops into electrical signals require hydrophobic substrates with a high density of static electric charge that is stable in “harsh environments” created by continued exposure to potentially saline water. The recently proposed charge-trapping electric generators (CTEGs) that rely on stacked inorganic oxide–fluoropolymer (FP) composite electrets charged by homogeneous electrowetting-assisted charge injection (h-EWCI) seem to solve both problems, yet the reasons for this success have remained elusive. Here, systematic measurements at variable oxide and FP thickness, charging voltage, and charging time and thermal annealing up to 230 °C are reported, leading to a consistent model of the charging process. It is found to be controlled by an energy barrier at the water-FP interface, followed by trapping at the FP-oxide interface. Protection by the FP layer prevents charge densities up to −1.7 mC m⁻² from degrading and the dielectric strength of SiO₂ enables charge decay times up to 48 h at 230 °C, suggesting lifetimes against thermally activated discharging of thousands of years at room temperature. Combining high dielectric strength oxides and weaker FP top coatings with electrically controlled charging provides a new paradigm for developing ultrastable electrets for applications in energy harvesting and beyond.