Efficacy of interferons in treating children with chronic hepatitis C

Twenty-two children with chronic hepatitis serologically positive for hepatitis C virus (HCV) were treated with interferon-alpha (IFN-alpha). Liver biopsy showed chronic active hepatitis in 13 and chronic persistent hepatitis in 9 patients. A sustained clearance of HCV was observed in 8/22 children 12 months after the administration of IFN-alpha for 26 weeks, associated with normalization of HCV core antibody. Of these eight patients six had HCV genotype III and two HCV genotype II or IV. Hepatitis relapsed in seven other patients after completion of IFN-alpha with an increase in HCV core antibody titre, five with HCV genotype II, and two with HCV genotype III or IV. A second course of IFN-alpha suppressed the reactivation of HCV in all seven patients. Three of seven responders who relapsed after the first course remained negative for HCV RNA 12 months after their second course of IFN-alpha. However, the remaining four patients with HCV genotype II again relapsed after completing their second course of IFN-alpha. Seven children with the HCV genotype II resistant to IFN, including 8 weeks of IFN-beta administration, and showed no significant reduction in HCV core antibody titre. CONCLUSION: The genotype of HCV (III) and a reduction in the core antibody titre appear to be useful parameters for predicting the response to IFN-alpha therapy.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

A load dispatch method using fractional programming and semidefinite programming

This paper describes a load dispatch method which minimizes power cost—[fuel cost]/[electric output]—for a power system with thermal plants and energy storage facilities. The proposed method employs fractional programming to convert a minimization problem with fractional objective function to a series of quadratic minimization problems, and semidefinite programming to solve converted problems. The method provides the optimum time‐dependent power output/input and storage level of energy storage facilities as well as time‐dependent power output of thermal plants. The method has been applied to a power system with five thermal plants, two energy storage facilities of various performances, and five load demands. The optimum load scheme of four time mesh points is obtained for the thermal plants and energy storage facilities. The fractional programming successfully converges the optimal scheme through a few iterations. The semidefinite programming deals with a variable matrix of 164 dimensions, and 185 inequality constraints. © 2001 Scripta Technica, Electr Eng Jpn, 138(2): 49–58, 2002     

Drain structure optimization for highly reliable deep submicrometern-channel MOSFET

A guideline for n^- fully gate overlapped (FOLD) structure design optimization has been studied. From the viewpoint of reliability, the greatest reduction in substrate current directly leads to the most reliable n^- design for the FOLD structure. The current path modulation phenomenon due to the trapped charge at the n ^- extension region dominates the hot-carrier induced characteristics change for conventional lightly doped drain (LDD) structure with side-wall spacer. This phenomenon is minimized in the FOLD structure due to its higher controllability of the gate electrode than the LDD structure at the n^- extension region. Furthermore, it was also confirmed that the 0.3 μm optimized FOLD structure can achieve high circuit performance at 3.3 V operation, maintaining hot-carrier resistance     

Change of characteristics of desulfurization and denitrification by combustion flue gas composition and electrode configuration under pulsed corona discharge

Laboratory-scale and parametric experiments of SO₂ and NO_x removal from the simulated combustion gas by pulsed corona discharge have been performed by changing the combustion gas composition and temperature, the electrode configuration of plasma reactor, and the polarity of high-voltage electrode. The following results are obtained: 1) the higher the concentration of H₂O and O₂, the higher the efficiency of desulfurization and denitrification at the same specific input; 2) the pulsed corona discharge with a voltage pulsewidth as short as 200 ns of negative polarity shows the possibility to attain almost 90 percent deSO_x and deNO_x efficiency at the specific discharge input of 20 J/g, which is almost the same as the specific input in the electron-beam process; 3) the deNO_x characteristics show a little temperature dependence in the range of 70 to 130°C, but the deSO_x efficiency increases rapidly in the temperature region below 100°C suggesting the thermochemical dependence of deSO_x reaction; 4) when desulfurization and denitrification proceed, the white dendritic powder deposits on the plasma reactor whose composition is identified to be 49 mol% (NH₄)₂SO₄ and 47 mol% of 2NH₄NO₃ · (NH₄)₂SO₄, and the ratio of SO₂, NO and NH₃ of the deposit is almost equal to that of supplied gas.     

Radiation damage induced in Si photodiodes by high-temperature neutron irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E _c–0.22 eV) and (E _c–0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E _v+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.     

OA&M framework for multiwavelength photonic transport networks

Photonic networks based on wavelength division multiplexing (WDM) and optical path technologies are expected to realize flexible, transparent, and cost-effective transport networks with a large transmission capacity. This paper explores the design framework of photonic transport networks taking into consideration the operation administration and maintenance (OA&M) functions required for the successful introduction of WDM systems based on the optical path concept. From the view point of network maintenance, clear distinction is made between the optical path layer and the optical section layer to facilitate accurate and smooth failure localization. The digital multiplexing span between physical multiplexing interfaces at the end-to-end digital nodes should have the same maintenance span as the corresponding optical path. We argue that cooperative maintenance by OA&M functions at both the digital and optical layers can be a practical way of network supervision. A supervisory (SV) signal transfer method and a configuration that is suitable for the terrestrial trunk network are also indicated. As an example, a practical SV system design methodology and an actual procedure developed for a single channel optical transmission system based on optical in-line amplifiers are introduced. Furthermore, application of the developed SV system and network restoration schemes is discussed for future WDM-based photonic networks. The OA&M aspects introduced will be valuable for creating future photonic network systems     

Adducin is an in vivo substrate for protein kinase C: phosphorylation in the MARCKS-related domain inhibits activity in promoting spectrin-actin complexes and occurs in many cells, including dendritic spines of neurons

Adducin is a heteromeric protein with subunits containing a COOH-terminal myristoylated alanine-rich C kinase substrate (MARCKS)-related domain that caps and preferentially recruits spectrin to the fast-growing ends of actin filaments. The basic MARCKS-related domain, present in alpha, beta, and gamma adducin subunits, binds calmodulin and contains the major phosphorylation site for protein kinase C (PKC). This report presents the first evidence that phosphorylation of the MARCKS-related domain modifies in vitro and in vivo activities of adducin involving actin and spectrin, and we demonstrate that adducin is a prominent in vivo substrate for PKC or other phorbol 12-myristate 13-acetate (PMA)-activated kinases in multiple cell types, including neurons. PKC phosphorylation of native and recombinant adducin inhibited actin capping measured using pyrene-actin polymerization and abolished activity of adducin in recruiting spectrin to ends and sides of actin filaments. A polyclonal antibody specific to the phosphorylated state of the RTPS-serine, which is the major PKC phosphorylation site in the MARCKS-related domain, was used to evaluate phosphorylation of adducin in cells. Reactivity with phosphoadducin antibody in immunoblots increased twofold in rat hippocampal slices, eight- to ninefold in human embryonal kidney (HEK 293) cells, threefold in MDCK cells, and greater than 10-fold in human erythrocytes after treatments with PMA, but not with forskolin. Thus, the RTPS-serine of adducin is an in vivo phosphorylation site for PKC or other PMA-activated kinases but not for cAMP-dependent protein kinase in a variety of cell types. Physiological consequences of the two PKC phosphorylation sites in the MARCKS-related domain were investigated by stably transfecting MDCK cells with either wild-type or PKC-unphosphorylatable S716A/S726A mutant alpha adducin. The mutant alpha adducin was no longer concentrated at the cell membrane at sites of cell-cell contact, and instead it was distributed as a cytoplasmic punctate pattern. Moreover, the cells expressing the mutant alpha adducin exhibited increased levels of cytoplasmic spectrin, which was colocalized with the mutant alpha adducin in a punctate pattern. Immunofluorescence with the phosphoadducin-specific antibody revealed the RTPS-serine phosphorylation of adducin in postsynaptic areas in the developing rat hippocampus. High levels of the phosphoadducin were detected in the dendritic spines of cultured hippocampal neurons. Spectrin also was a component of dendritic spines, although at distinct sites from the ones containing phosphoadducin. These data demonstrate that adducin is a significant in vivo substrate for PKC or other PMA-activated kinases in a variety of cells, and that phosphorylation of adducin occurs in dendritic spines that are believed to respond to external signals by changes in morphology and reorganization of cytoskeletal structures.     

Development of next generation PWR in Japan

The demand for energy in Japan is expected to increase steadily into the future, and it seems that the importance of nuclear power generation will be heightened more when the situation of our country which is not rich in energy resources is taken into account.

Furthermore, when we consider the present situation that the light water reactors have become common, recent outlook for the supply and demand for uranium resources, trends in the development of the fast breeder reactor technology, etc., the light water reactors are expected to remain dominant in the nuclear power generation of our country until at least the second half of the 21st century.

Based on such a background five PWR utilities in Japan (Hokkaido, Kansai, Shikoku, Kyushu, and the Japan Atomic Power), and Mitsubishi Heavy Industries, Ltd. have jointly started researching the Next Generation PWR which is expected to be the leading nuclear power plant taking place of APWR.