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Feng  Wenran  Li  Zhen  Chen  Yingying  Chen  Jinyang  Lang  Haoze  Wan  Jianghong  Gao  Yan  Dong  Haitao 《Journal of Materials Science》2022,57(3):1881-1889
Journal of Materials Science - Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in...  相似文献   
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Photoresponsive biomaterials are experiencing a transition from in vitro models to in vivo demonstrations that point toward clinical translation. Dynamic hydrogels for cell encapsulation, light-responsive carriers for controlled drug delivery, and nanomaterials containing photosensitizers for photodynamic therapy are relevant examples. Nonetheless, the step to the clinic largely depends on their combination with technologies to bring light into the body. This review highlights the challenge of photoactivation in vivo, and presents strategies for light management that can be adopted for this purpose. The authors’ focus is on technologies that are materials-driven, particularly upconversion nanoparticles that assist in “direct path” light delivery through tissue, and optical waveguides that “clear the path” between external light source and in vivo target. The authors’ intention is to assist the photoresponsive biomaterials community transition toward medical technologies by presenting light delivery concepts that can be integrated with the photoresponsive targets. The authors also aim to stimulate further innovation in materials-based light delivery platforms by highlighting needs and opportunities for in vivo photoactivation of biomaterials.  相似文献   
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Composites based on hafnium carbide and reinforced with continuous naked carbon fiber with and without PyC interface were prepared at low temperature by precursor infiltration and pyrolysis and chemical vapor deposition method. The microstructure, mechanical property, cyclic ablation and fiber bundle push-in tests of the composites were investigated. The results show that after three times ablation cycles, the bending strength of samples without PyC interface decreased by 63.6 %; the bending strength of samples with PyC interface only decreased by 37.8 %. The force displacement curve of the samples with PyC interface presented a well pseudoplastic deformation state. The mechanical behavior difference of two kinds of composites was due to crucial function of PyC interface phase including protection of fiber and weakening of fiber/matrix interface.  相似文献   
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为了解决基于NTP的网络时间服务器校准问题,对其展开校准项目和校准方法的探讨,给出了NTP同步偏差、定时准确度和定时稳定度等校准项目并结合实验详细阐述了两种NTP同步偏差的校准方法,实验结果表明,采用直接测量法的NTP同步偏差为10.25μs,不确定度为62.08μs(k=2);采用比较法的NTP同步偏差为139.75μs,不确定度为6.36ms(k=2).  相似文献   
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Ultrawide band gap semiconductor materials have attracted considerable attention in recent years owing to their great potential in the photocatalytic field. In this study, Zn-doped Ga2O3 nanofibers with various concentrations were synthesized via electrospinning; they exhibited a superior photocatalytic degradation performance of rhodamine B dye compared to that of undoped Ga2O3 nanofibers. The Zn dopant replaced Ga sites via replacement doping, which could increase the concentration of oxygen vacancies and lead to enhanced photocatalytic properties. When the Zn concentration increased, a Ga2O3/ZnGa2O4 hybrid structure formed, which could further enhance the photocatalytic performance. The separation of photogenerated carriers due to Zn doping and heterojunctions were the primary causes of the enhanced photocatalytic performance. This study provides experimental data for the fabrication of high-performance photocatalysts based on Ga2O3 nanomaterials.  相似文献   
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Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO3/SrRuO3 thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.  相似文献   
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Utilizing inner-crystal piezoelectric polarization charges to control carrier transport across a metal-semiconductor or semiconductor–semiconductor interface, piezotronic effect has great potential applications in smart micro/nano-electromechanical system (MEMS/NEMS), human-machine interfacing, and nanorobotics. However, current research on piezotronics has mainly focused on systems with only one or rather limited interfaces. Here, the statistical piezotronic effect is reported in ZnO bulk composited of nanoplatelets, of which the strain/stress-induced piezo-potential at the crystals’ interfaces can effectively gate the electrical transport of ZnO bulk. It is a statistical phenomenon of piezotronic modification of large numbers of interfaces, and the crystal orientation of inner ZnO nanoplatelets strongly influence the transport property of ZnO bulk. With optimum preferred orientation of ZnO nanoplatelets, the bulk exhibits an increased conductivity with decreasing stress at a high pressure range of 200–400 MPa, which has not been observed previously in bulk. A maximum sensitivity of 1.149 µS m−1 MPa−1 and a corresponding gauge factor of 467–589 have been achieved. As a statistical phenomenon of many piezotronic interfaces modulation, the proposed statistical piezotronic effect extends the connotation of piezotronics and promotes its practical applications in intelligent sensing.  相似文献   
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