A Novel Self-Organizing Approach to Automatic Traffic Light Management System for Road Traffic Network

Wireless Personal Communications - Traffic network is basically a “network of networks” consisting of mainly two types of networks: road network and a travel network. Due to drastic...     

Experimental investigation of Co and Fe-Doped CuO nanostructured electrode material for remarkable electrochemical performance

The current research work presents a facile and cost–effective co-precipitation method to prepare doped (Co & Fe) CuO and undoped CuO nanostructures without usage of any type of surfactant or capping agents. The structural analysis reveals monoclinic crystal structure of synthesized pure CuO and doped-CuO nanostructures. The effect of different morphologies on the performance of supercapacitors has been found in CV (cyclic voltammetry) and GCD (galvanic charge discharge) investigations. The specific capacitances have been obtained 156 (±5) Fg^?1, 168(±5) Fg^?1 and 186 (±5) Fg^?1 for CuO, Co-doped CuO and Fe-doped CuO electrodes, respectively at scan rate of 5 mVs^?1, while it is found to be 114 (±5) Fg^?1, 136 (±5) Fg^?1 and 170 (±5) Fg^?1 for CuO, Co–CuO and Fe–CuO, respectively at 0.5 Ag^-1 as calculated from the GCD. The super capacitive performance of the Fe–CuO nanorods is mainly attributed to the synergism that evolves between CuO and Fe metal ion. The Fe-doped CuO with its nanorods like morphology provides superior specific capacitance value and excellent cyclic stability among all studied nanostructured electrodes. Consequently, it motivates to the use of Fe-doped CuO nanostructures as electrode material in the next generation energy storage devices.     

Identifying crop water stress using deep learning models

Neural Computing and Applications - The identification of water stress is a major challenge for timely and effective irrigation to ensure global food security and sustainable agriculture. Several...     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.     

Study of automatic text summarization approaches in different languages

Artificial Intelligence Review - Nowadays we see huge amount of information is available on both, online and offline sources. For single topic we see hundreds of articles are available, containing...     

An efficient approach for face recognition based on common eigenvalues

In this paper, a simple technique is proposed for face recognition among many human faces. It is based on the polynomial coefficients, covariance matrix and algorithm on common eigenvalues. The main advantage of the proposed approach is that the identification of similarity between human faces is carried out without computing actual eigenvalues and eigenvectors. A symmetric matrix is calculated using the polynomial coefficients-based companion matrices of two compared images. The nullity of a calculated symmetric matrix is used as similarity measure for face recognition. The value of nullity is very small for dissimilar images and distinctly large for similar face images. The feasibility of the propose approach is demonstrated on three face databases, i.e., the ORL database, the Yale database B and the FERET database. Experimental results have shown the effectiveness of the proposed approach for feature extraction and classification of the face images having large variation in pose and illumination.     

Numerical and experimental investigation of three-dimensional flow in extrusion dies

The univariant element, Q₁ P₀, and the multivariant elements, QP₀ and R P₀, are compared for the numerical simulation of the flow in extrusion dies. The pressure distribution obtained by using the Q₁ P₀ element was found to be afflicted with the checkerboard pressure mode. On the other hand, the multivariant elements, Q P₀ and R P₀, gave accurate and physically reasonable velocity and pressure distributions. The computed values of the pressure drop across extrusion dies matched well with the pressure drop determined experimentally.     

A robust test of uncertain linear systems

In this paper, it is shown that for low-order uncertain systems, there is no need to calculate all the minimum and maximum values of the coefficients for a perturbed system which is expressed in terms of polynomials and hence no need to formulate and test all the four Kharitonov＇s polynomials. Furthermore, for higher-order systems such as n ≥ 5, the usual four Kharitonov＇s polynomials need not be tested initially for sufficient condition of perturbed systems; rather, the necessary condition can be checked before going for sufficient condition. In order to show the effectiveness of the proposed method, numerical examples are shown and computational efficiency is highlighted.     

Empirical validation of object-oriented metrics for predicting fault proneness models

Empirical validation of software metrics used to predict software quality attributes is important to ensure their practical relevance in software organizations. The aim of this work is to find the relation of object-oriented (OO) metrics with fault proneness at different severity levels of faults. For this purpose, different prediction models have been developed using regression and machine learning methods. We evaluate and compare the performance of these methods to find which method performs better at different severity levels of faults and empirically validate OO metrics given by Chidamber and Kemerer. The results of the empirical study are based on public domain NASA data set. The performance of the predicted models was evaluated using Receiver Operating Characteristic (ROC) analysis. The results show that the area under the curve (measured from the ROC analysis) of models predicted using high severity faults is low as compared with the area under the curve of the model predicted with respect to medium and low severity faults. However, the number of faults in the classes correctly classified by predicted models with respect to high severity faults is not low. This study also shows that the performance of machine learning methods is better than logistic regression method with respect to all the severities of faults. Based on the results, it is reasonable to claim that models targeted at different severity levels of faults could help for planning and executing testing by focusing resources on fault-prone parts of the design and code that are likely to cause serious failures.