Production of graphene by exfoliation of graphite in a volatile organic solvent

The production of unfunctionalized and nonoxidized graphene by exfoliation of graphite in a volatile solvent, 1-propanol, is reported. A stable homogeneous dispersion of graphene was obtained by mild sonication of graphite powder and subsequent centrifugation. The presence of a graphene monolayer was observed by atomic force microscopy and transmission electron microscopy. The solvent, 1-propanol, from the deposited dispersion was simply and quickly removed by air drying at room temperature, without the help of high temperature annealing or vacuum drying, which shortens production time and does not leave any residue of the solvent in the graphene sheets.     

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (～4.1 eV) compared to that of a pristine Au electrode (～4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ～0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ～0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ～12 kHz) based on a solution-processed ambipolar polymer are demonstrated.     

Downscaling of self-aligned, all-printed polymer thin-film transistors

Printing is an emerging approach for low-cost, large-area manufacturing of electronic circuits, but it has the disadvantages of poor resolution, large overlap capacitances, and film thickness limitations, resulting in slow circuit speeds and high operating voltages. Here, we demonstrate a self-aligned printing approach that allows downscaling of printed organic thin-film transistors to channel lengths of 100-400 nm. The use of a crosslinkable polymer gate dielectric with 30-50 nm thickness ensures that basic scaling requirements are fulfilled and that operating voltages are below 5 V. The device architecture minimizes contact resistance effects, enabling clean scaling of transistor current with channel length. A self-aligned gate configuration minimizes parasitic overlap capacitance to values as low as 0.2-0.6 pF mm(-1), and allows transition frequencies of fT = 1.6 MHz to be reached. Our self-aligned process provides a way to improve the performance of printed organic transistor circuits by downscaling, while remaining compatible with the requirements of large-area, flexible electronics manufacturing.     

Optical and barrier properties of thin-film encapsulations for transparent OLEDs

We investigate the optical and barrier properties of thin-film encapsulations (TFEs) for transparent organic light-emitting diodes (TOLEDs). To improve the barrier property of OLEDs, the number of dyads (Al₂O₃/polymer) and the thickness of polymer layer in the TFE structure are required to be increased. It is, however, demonstrated that a sharp dip appears in the transmittance of TFE films due to the interference of light caused by organic/inorganic multi-layered configuration, resulting in a dip in the top emission spectrum of TOLEDs. We have found that such a transmittance dip deepens when the number of dyads is large. What is worse, the number of transmittance dips and their sharpness are raised with increased thickness of the polymer layer. When the number of dyads is small, however, the effect of the polymer layer thickness on such a transmittance dip is weak. Therefore, we have addressed that the number of dyads needs to be reduced, but the thickness of the polymer layer should be increased to meet both optical and barrier properties of TOLEDs at the same time.     

Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

In this contribution we demonstrate for the first time a downscaled n-channel organic field-effect transistors based on N,N′-dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) with inkjet printed electrodes. First we demonstrate that the use of a high boiling point solvent is critical to achieve extended crystalline domains in spin-coated thin films and thus high electron mobility >0.1 cm² V⁻¹ s⁻¹ in top-gate devices. Then inkjet-printing is employed to realize sub-micrometer scale channels by dewetting of silver nanoparticles off a first patterned gold contact. By employing a 50 nm crosslinked fluoropolymer gate dielectric, ∼200 nm long channel transistors can achieve good current saturation when operated <5 V with good bias stress stability.     

Low-voltage,high speed inkjet-printed flexible complementary polymer electronic circuits

We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1–0.4 cm² V^?1 s^?1 and low threshold voltages down to 5 V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend – a 7:3 wt% mixture of P(VDF-TrFE) and PMMA – was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (V_DD) of 5 V and showed an oscillation frequency (f_osc) as high as ～80 kHz at V_DD = 30 V. Furthermore, the f_osc of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, V_DD, and the overlap capacitance in the circuit configuration.     

Implementation of hybrid P2P networking distributed web crawler using AWS for smart work news big data

Web crawlers collect and index the vast amount of data available online to gather specific types of objective data such as news that researchers or practitioners need. As big data are increasingly used in a variety of fields and web data are exponentially growing each year, the importance of web crawlers is growing as well. Web servers that currently handle high traffic, such as portal news servers, have safeguards against security threats such as distributed denial-of-service (DDoS) attacks. In particular, the crawler, which causes a large amount of traffic to the Web server, has a very similar nature to DDoS attacks, so the crawler’s activities tend to be blocked from the web server. A peer-to-peer (P2P) crawler can be used to solve these problems. However, the limitations with the pure P2P crawler is that it is difficult to maintain the entire system when network traffic increases or errors occur. Therefore, in order to overcome these limitations, we would like to propose a hybrid P2P crawler that can collect web data using the cloud service platform provided by Amazon Web Services (AWS). The hybrid P2P networking distributed web crawler using AWS (HP2PNC-AWS) is applied to collecting news on Korea’s current smart work lifestyle from three portal sites. In Portal A where the target server does not block crawling, the HP2PNC-AWS is faster than the general web crawler (GWC) and slightly slower than the server/client distributed web crawler (SC-DWC), but it has a similar performance to the SC-DWC. However, in both Portal B and C where the target server blocks crawling, the HP2PNC-AWS performs better than other methods, with the collection rate and the number of data collected at the same time. It was also confirmed that the hybrid P2P networking system could work efficiently in web crawler architectures.

     

High-Performance and Reliable Lead-Free Layered-Perovskite Transistors

Perovskites have been intensively investigated for their use in solar cells and light-emitting diodes. However, research on their applications in thin-film transistors (TFTs) has drawn less attention despite their high intrinsic charge carrier mobility. In this study, the universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs are reported. These include self-passivation for grain boundary by excess phenethylammonium iodide, grain crystallization control by adduct, and iodide vacancy passivation through oxygen treatment. It is found that the grain boundary passivation can increase TFT reproducibility and reliability, and the grain size enlargement can hike the TFT performance, thus, enabling the first perovskite-based complementary inverter demonstration with n-channel indium gallium zinc oxide TFTs. The inverter exhibits a high gain over 30 with an excellent noise margin. This work aims to provide widely applicable and repeatable methods to make the gate more open for intensive efforts toward high-performance printed perovskite TFTs.