Tribological Characteristics of SiC Ceramics in High-Temperature and High-Pressure Water

The effects of temperature and sliding speed on the tribological behavior of a SiC ceramic by sliding on the same material in deoxygenated water were investigated from room temperature to 300°C under the corresponding saturated vapor pressures. The friction coefficient and specific wear rates of both plates and disks increased at elevated temperatures at all sliding speeds, but decreased with increasing sliding speed at 120° and 300°C. Fine mirrorlike worn surfaces were observed without wear debris under all sliding conditions. The wear mechanism appears to consist of hydrothermal oxidation of SiC and dissolution of reaction products such as silica.     

Microstructures of functionally graded materials fabricated by centrifugal solid-particle andin-situ methods

Functionally graded materials (FGMs) belong to a relatively new class of inhomogeneous composite materials, in which the composition and/or microstructure undergo a gradual change along some directions. In this review article, the microstructures and composition gradients in Al/SiC, Al/Shirasu (volcanic eruptions commonly found in south Kyushu in Japan), Al/Al₃Ti, Al/Al₃Ni, Al/Al₂Cu FGMs have been investigated. The Al/SiC, Al/Shirasu and Al/Al₃Ti FGMs are fabricated by the centrifugal solid particle method where the distribution particles of SiC, Shirasu and Al₃Ti are solids in the melts. On the other hand, Al/Al₃Ni and Al/Al₂Cu FGMs are fabricated by the centrifugalin-situ method where Al/Al₃Ni and Al/Al₂Cu systems have lower liquidus temperatures than the processing temperatures. The feature of Al/(Al₃Ti−Al₃Ni) hydrid FGM, which is fabricated by a method combining both the centrifugal solid-particle andin-situ methods, is also shown.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.     

A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In _xGa _1?xSb with higher indium composition at Chinese recovery satellite SJ-10 in near future.     

Microstructure and refining performance of an Al−5Ti−0.25C refiner before and after equal-channel angular pressing

Refining experiments were conducted to evaluate the grain refining performance of an Al−5Ti−0.25C refiner before and after equal-channel angular pressing (ECAP) with the use of a high-purity Al. The results show that the Al−5Ti−0.25C refiner has remarkable and stable grain refining performance when the holding times are within 5 to 30 minutes and the melt temperatures are within 1003 to 1073 K. Furthermore, some Al−5Ti−0.25C refiner samples were subjected to severe plastic deformation by using the ECAP technique at 298 K. It was found that Al₃Ti and TiC particles were significantly fragmented and their mean sizes were decreased to 10 and 1.08 μm, respectively, and the Al−5Ti−0.25C refiner appeared to have a double grain refining effect in comparison with that of before ECAP. It is also testified that the Vickers microhardness (Hv) value of the pure Al samples refined by the Al−5Ti−0.25C refiner after ECAP processing has a significant increment than that of before ECAP processing. It is concluded that the Al−5Ti−0.25C refiner with ECAP technique has a very useful practical application in refining industrial Al alloys. ZUOGUI ZHANG, formerly Master's Student, the Key Laboratory of Liquid Structure and Heredity of Material, Ministry of Education, Shandong University, Jinan 250061, People's Republic of China     

Effect of gravity on InGaSb crystal growth

The effect of gravity on dissolution of GaSb in InSb melt and growth of InGaSb was experimentally investigated. Experiments were carried out in a GaSb(seed)/InSb/GaSb(feed) sandwich system under an imposed temperature gradient. In the experiments, the GaSb feed crystal dissolved into the InSb melt to supply the required GaSb component for the growth of In_0.1Ga_0.9Sb crystal. Two parameters were considered: (1) the inclination angle (θ) of the sample for gravity as 0° and 53°, and (2) the sample diameter (D) as 9 mm and 5mm. When θ was 0°, the interface was almost flat, indicating that convection was axisymmetric and stable. Whereas the interface was distorted towards gravitational direction when θ was 53°, indicating that solutal convection was dominant. The decrease of growth temperature and sample diameter reduced the distortion of interface and the dissolution amount of GaSb feed. The homogeneous crystals were grown at the initial growth stage by supplying the GaSb component during growth.     

Evaluation of FMS: State of the art regarding how to evaluate system flexibility

The evaluation of FMS becomes very important in accordance with the advancement of FMS technology. The evaluation method so far employed is the economical justification; however, it should be improved so as to enable the system flexibility to be simultaneously evaluated. Thus, this paper describes the reviewed results on the present trend of system evaluation, putting the main stress on the technology regarding the evaluation of system flexibility.     

Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching

Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.     

Submicrometre X-ray printing with X-ray masks delineated by high-voltage electron-beam writing

High-voltage electron-beam writing has been successfully utilised to fabricate high-resolution and high-accuracy X-ray masks with vertical-wall gold patterns which have made it possible to print a ? ?m resist pattern without any pattern size variation across steps.