Cobalt oxide polymorph growth on electrostatic self-assembled nanoparticle arrays for dually tunable nano-textures

We report on a method for surface nano-texturing on a plastic substrate. Nano-objects with a silica nanoparticle core and a textured cobalt oxide crown are created with selectable density on the plastic substrate. The resulting dual morphology is easily tuned over large areas, either by changing the parameters directing nanoparticle deposition through electrostatic self-arrangement for nano-object density control, or the parameter directing cobalt oxide deposition for shape control. The entire process takes place at room temperature, with no chemicals harmful to the plastic substrate. The ready modulation of the dual morphology is used to control the wettability properties of the plastic film, which is covered by nano-objects.     

Thin-film encapsulation of top-emission organic light-emitting devices with polyurea/Al2O3 hybrid multi-layers

We developed a room-temperature encapsulation process based on multi-stack of ultra thin Al₂O₃ and polyurea layers for top-emission organic light-emitting devices (TEOLEDs). Device structure, including a capping layer for refractive-index matching and a thick polyurea buffer layer, was optimized to enhance light extraction without distorting electroluminescence spectrum. The efficiency of a TEOLED encapsulated with 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers was better than that of a glass-encapsulated TEOLED, whereas their color coordinates were almost identical. Moreover, the half-decay lifetime of a TEOLED encapsulated with 5 pairs of Al₂O₃/polyurea layers was 86% of that of a glass-encapsulated TEOLED. Water vapor transition rate of 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers on PET film was measured as low as 5 × 10⁻⁴ g/m² day.     

H2 sensing characteristics of highly textured Pd-doped SnO2 thin films

The effects of the crystallographic orientation on the H₂ gas sensing properties were investigated in highly oriented polycrystalline Pd-doped SnO₂ films, which were obtained using rf magnetron sputtering of a Pd (0.5 wt%)-SnO₂ target on various substrates (a-, m-, r-, and c-cut sapphire and quartz). All the films had a similar thickness (110 nm), root-mean-square (rms) roughness (1.3 nm), surface area, and chemical status (O, Sn, and Pd). However, the orientation of the films was strongly affected by the orientation of the substrates. The (1 0 1), (0 0 2), and (1 0 1) oriented films were grown on (a-cut), (m-cut), and (r-cut) Al₂O₃ substrates, respectively, and rather randomly oriented films were deposited on (0 0 0 1) (c-cut) Al₂O₃ and quartz substrates. In addition, the oriented Pd-doped SnO₂ films were highly textured and had in-plane orientation relationships with the substrates similar to the epitaxial films. The (1 0 1) Pd-doped SnO₂ films on and Al₂O₃ showed a considerably higher H₂ sensitivity, and their gas response decreased with increasing sensing temperature (400–550 °C). The films deposited on and (0 0 0 1) Al₂O₃ showed the maximum sensitivity at 500 °C. The comparison of the H₂ gas response between undoped and Pd-doped SnO₂ films revealed that the Pd-doping shifted the optimum sensing temperature to a lower value instead of improving the gas sensitivity.     

Effect of copper concentration in printable copper inks on film fabrication

Precursor-type Cu inks were formulated by mixing copper (II) formate and hexylamine. The lowest electrical resistivity obtained in Cu films made from these inks was 5.2 μΩ·cm. The Cu concentrations in the inks influenced the impurity content after annealing and the microstructure (specifically, the porosity). Inks with a higher volume of hexylamine had a narrower size distribution of Cu particles, so they formed denser films. However, a large volume of hexylamine could not be fully vaporized during a limited annealing time and reacted with formate, creating impurities having boiling temperatures higher than that of hexylamine. Therefore, the Cu concentration governed two factors, porosity and impurity content, which ultimately determined the electrical resistivity of the films. These findings are expected to facilitate the development of copper-based metallic inks for printed electronics.