声波测井换能器激发响应实验研究

声波测井换能器的激发响应由换能器振动时所表现出来的动态阻抗和激发电路参数决定。而换能器的动态（阻抗）参数随压电晶体及其装配方式（力学边界条件）改变。为了测量换能器动态参数的影响，采用声波测井仪器常用的压电晶体和升压变压器，通过改变激发脉冲宽度和直流电压进行了实验，结果发现：在换能器两端的瞬态响应中，一共有三个二阶网络响应，分别对应于不同的频率。最低的一个影响声波测井波形的基线、与换能器主频接近的一个决定激发效率以及电路与压电晶体之间的匹配关系，是激发电路设计中比较关键的，其参数可以通过导纳圆测量仪器得到。     

新设备技术在催化裂化装置上的应用

文章介绍了近年来在催化裂化装置上应用的新设备、新技术,如BY型旋风分离器、BSX型旋分式三级旋风分离器、上下拱型三级旋风分离器、下拱型三级旋风分离器、SHS“自蔓延”技术、SWY外取热器、BWJ型喷嘴、自流浇注料、Actehem高耐磨衬里、弓形钢丝纤维、侧拉环锚固钉、分体可拆人孔等的结构特点及实际应用情况。     

TUD-DNS3脱硝助剂在催化裂化装置的工业应用

TUD-DNS3脱硝助剂在中韩（武汉）石油化工有限公司1号催化裂化装置上进行了工业应用。结果表明：针对两段再生工艺，当系统中助剂占总催化剂藏量的质量分数为2.6%时，烟气脱硫装置外排污水中的氨氮质量浓度由加剂前的100 mg/L下降至40 mg/L以内；助剂的加入降低了CO焚烧炉的炉膛温度，有利于烟气的合格排放，并对装置操作、产品分布及汽油、柴油产品质量无不良影响。     

A decision support system for interactive decision making - Part II: analysis and output interpretation

For pt.I see ibid., p.42-55 (2003). The development of a comprehensive decision support system, GMCR II, for the systematic study of real-world interactive decision problems is presented. The companion paper (Part I), discusses how GMCR II elicits, stores, and manages conflict models; here (Part II), the focus is on GMCR IIs analysis and output interpretation subsystems. Specifically, this paper describes the powerful and efficient analysis engine contained in GMCR II, its informative output presentation and interpretation facilities, and a number of follow-up analyses. Furthermore, an illustrative case study is used to demonstrate how GMCR II can be conveniently applied in practice.     

Field Static Load Test on Kao-Ping-Hsi Cable-Stayed Bridge

Field load testing is an effective method for understanding the behavior and fundamental characteristics of a cable-stayed bridge. This paper presents the results of field static load tests on the Kao-Ping-Hsi cable-stayed bridge, the longest cable-stayed bridge in Taiwan, before it was open to traffic. A total of 40 loading cases, including the unit and distributed bending and torsion loading effects, were conducted to investigate the bridge behavior. The atmospheric temperature effect on the variations of the main girder deflections was also monitored. The results of static load testing include the main girder deflections, the flexural strains of the prestressed concrete girder, and the variations of the cable forces. A three-dimensional finite-element model was developed. The results show that the bridge under the planned load test conditions has linear superposition characteristics and the analytical model shows a very good agreement with the bridge responses. Further discussion of deflection and cable forces of the design specifications for a cable-stayed bridge is also presented.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

连续波雷达测距中的解模糊技术

研究连续波雷达测距中的距离模糊问题，分析几种常用解模糊方法的性能，并讨论参差比的选取对测距范围的影响。     

关于我国钢铁工业发展战略的思考

21世纪初是世界经济发展的重大战略机遇期,如何抓住机遇加快发展,是中国钢铁行业应认真思考的问题。十一五我国钢铁工业的发展,靠什么来拉动,还能靠大规模的投资吗?目前我们还不能生产的双高产品怎么办,靠花钱能买来技术吗?靠市场能换来核心产品吗?值得深思。当今,我们思考的不仅应考虑个别企业的生存问题,而更应考虑的是钢铁行业整体的长远发展问题,即     

了解您的管理跨度--科研项目管理方法探索

概要介绍了科学的管理技术——项目管理方法，讨论了管理跨度在项目管理中的重要性，并推荐了如何了解管理跨度的方法。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.