Interfacial strength and chemistry of additive-free silicon nitride ceramics brazed with aluminium

Two kinds of additive-free silicon nitride ceramics were brazed with aluminium; one was with as-ground faying surfaces and the other was with faying surfaces heat-treated at 1073K for 1.8 ksec in air. The heat-treatment of the silicon nitride ceramics formed a silicon oxynitride layer on the faying surfaces and increased the brazing strength of the joints. A silica-alumina non-crystalline layer and a β′-sialon layer were formed successively from the aluminium side at the interface of the joints. The heat-treatment which made the former layer thicker is a necessary process in making reliable, strong brazed joints.     

改性生物质作为型煤黏结剂的研究

探讨了用NaOH改性生物质秸秆作为型煤黏结剂的可行性,考察了NaOH溶液浓度对生物质改性的影响以及生物质添加量、无机物(MgO和MgCl2)添加量对型煤机械强度、防水性能和着火温度的影响。研究结果表明,NaOH改性液的质量分数为1.0%~2.0%时,制得的生物质型煤有较高的机械强度;生物质添加量在2%~20%时,随生物质添加量的增加,机械强度增加,着火温度降低,但防水性较差;而在生物质型煤中加入适量无机黏结剂后,型煤有很高的浸水强度,表现出优越的防水性能。     

雷达仿真系统中电磁干扰环境的仿真设计和实施

雷达仿真系统是为检测雷达设备的抗干扰能力以及在各种电磁环境下的工作性能而设计的，包括有源干扰和无源干扰的模拟仿真。本文阐述了无源干扰即杂波的散射模型和仿真过程；从同步脉冲干扰的基本原理出发，阐明在雷达工作环境仿真系统中距离拖引、速度拖引、虚假目标等同步脉冲有源干扰的设计和实施过程；并针对工作在搜索和跟踪交替模式下的相控阵雷达提出自适应综合干扰方式；最后分析并总结了系统仿真时为真实、有效地模拟电磁干扰环境应注意的关键问题。     

TiNi shape memory alloys prepared by normal sintering

This paper covers the use of conventional press and sinter of titanium and nickel equiatomic blends, involving transient liquid phases. A notable development has been the fabrication of homogeneous compacts from the elemental powders. Results indicate that employment of a double-stage sintering cycle is effective to sustain the geometrical integrity of the sintered sample. The TiNi alloy prepared in this manner exhibits a recovery strain of 4.6% by generating a restoring stress of 230 MPa, with a martensitic transformation point M_s of 34 °C.     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。