基于完全互补码波形的非零多普勒目标检测

本文将完全互补码(Complete Complementary Code, CCC)应用于多输入多输出(Multiple Input Multiple Output, MIMO)雷达目标探测中，针对具有非零多普勒的多目标检测问题，提出一种基于广义普洛黑-修-莫尔斯(Generalized Prouhet-Thue-Morse, GPTM)序列和二项式系数加权的信号处理方法。该方法分别在发射端和接收端进行处理，在发射端采用GPTM序列设计方法调整脉冲的发射顺序，以降低由多普勒引起的距离旁瓣；在接收端通过二项式设计(Binomial Design, BD)方法为各接收脉冲加上不同权重，扩大目标多普勒附近的清洁区。为综合上述两次处理的优势，将两次处理得到的距离多普勒谱进行逐点最小化处理，得到最终的距离多普勒谱，然后进行有序恒虚警检测。仿真结果表明，本文所提的信号处理方法具有良好的旁瓣抑制效果和多普勒分辨率，能够有效检测出非零多普勒目标。     

基于形态特征提取的急性下壁心肌梗死BiLSTM网络辅助诊断算法

急性下壁心肌梗死是一种病发急、进展快、致死率高的心脏疾病,该文提出一种新颖的基于形态特征提取的BiLSTM神经网络分类的急性下壁心肌梗死辅助诊断算法,可大幅度提高医生对急性下壁心肌梗死疾病的诊断效率并有助于及时确诊.算法包括:对胸痛中心数据库心拍信号进行降噪及心拍分割;根据临床心内科医学诊断指南提取了12导联波形距离特征和分导联波形幅值特征;依据提取的特征搭建LSTM与BiLSTM神经网络进行心拍的分类识别;使用PTB公开数据库和胸痛中心数据库多临床中心进行交叉验证.实验结果表明,加入胸痛中心真实临床数据后,基于形态特征提取BiLSTM神经网络的急性下壁心肌梗死辅助诊断算法准确率达到99.72％,精度达到99.53％,灵敏度达到100.00％,同时F1-Score达到99.76.该算法比其他现有算法准确率提高至少1％,该项研究具有非常重要的临床应用价值.     

以雷电机理诠释大底盘建筑群电源SPD配置

引入雷电冲击电流分时段特性的重要机理,在细究电感特性的基础上,以电感线路电流不能突变为原理,解释说明雷击建筑物时的高电位在雷击"换路"一刹那间先于雷电流发生,并在大底盘建筑群内可靠传导,形成一全范围的高电位"等电位面".据此得出结论:大底盘建筑群是一栋电位紧密关联的防雷建筑物,在装设电源SPD时应将大底盘地面上多栋物理形态分开的建筑合并视为完整的单一一栋建筑,并根据低压电源线路进出大底盘建筑群的不同情况分别按GB 50057-2010《建筑物防雷设计规范》第4.3.8条第4、5款进行电源SPD配置.     

Hierarchical Attention for Part-Aware Face Detection

International Journal of Computer Vision - Expressive representations for characterizing face appearances are essential for accurate face detection. Due to different poses, scales, illumination,...     

In situ Raman spectroscopic study towards the growth and excellent HER catalysis of Ni/Ni(OH)2 heterostructure

The electrochemical water splitting to produce H₂ in high efficiency with earth-abundant-metal catalysts remains a challenge. Here, we describe a simple “cyclic voltammetry + ageing” protocol at room temperature to activate Ni electrode (AC-Ni/NF) for hydrogen evolution reaction (HER), by which Ni/Ni(OH)₂ heterostructure is formed at the surface. In situ Raman spectroscopy reveals the gradual growth of Ni/Ni(OH)₂ heterostructure during the first 30 min of the aging treatment and combined with polarization measurements, it suggests a positive relation between the Ni/Ni(OH)₂ amount and HER performance of the electrode. The obtained AC-Ni/NF catalyst, with plentiful Ni–Ni(OH)₂ interfaces, exhibits remarkable performance towards HER, with the low overpotential of only 30 mV at a H₂-evolving current density of 10 mA/cm² and 153 mV at 100 mA/cm², as well as a small Tafel slope of 46.8 mV/dec in 1 M KOH electrolyte at ambient temperature. The excellent HER performance of the AC-Ni/NF could be maintained for at least 24 h without obvious decay. Ex situ experiments and in situ electrochemical-Raman spectroscopy along with density functional theory (DFT) calculations reveal that Ni/Ni(OH)₂ heterostructure, although partially reduced, can still persist during HER catalysis and it is the Ni–Ni(OH)₂ interface reducing the energy barrier of H1 adsorption thus promoting the HER performance.     

Evolution of Local Structural Ordering and Chemical Distribution upon Delithiation of a Rock Salt–Structured Li1.3Ta0.3Mn0.4O2 Cathode

Lithium‐rich disordered rock‐salt oxides have attracted great interest owing to their promising performance as Li‐ion battery cathodes. While experimental and theoretical efforts are critical in advancing this class of materials, a fundamental understanding of key property changes upon Li extraction is largely missing. In the present study, single‐crystal synthesis of a new disordered rock‐salt cathode material, Li_1.3Ta_0.3Mn_0.4O₂ (LTMO), and its use as a model compound to investigate Li concentration–driven evolution of local cationic ordering, charge compensation, and chemical distribution are reported. Through the combined use of 2D and 3D X‐ray nanotomography, it is shown that Li removal accompanied by oxygen oxidation is correlated with the development of morphological defects such as particle cracking. Chemical heterogeneity, quantified by subparticle level distribution of Mn valence state, is minimal during Mn redox, which drastically increases upon the formation of cracks during oxygen redox. Density functional theory and bond valence sum mismatch calculations reveal the presence of local short‐range ordering in the pristine oxide, which gradually disappears along with the extraction of Li. The study suggests that with cycling the transformation into true cation–disordered state can be expected, which likely impacts the voltage profile and obtainable energy density of the oxide cathodes.     

夹套设备引出管制作技术

利用AutoCAD软件进行三维绘图,快速求解出夹套设备引出管这一任意三维面的展开样板,并且分析了制作过程中成形缺陷的产生原因,在此基础上汇总了一套完整的夹套设备引出管制作方法,此方法具有经济高效、适用性强及应用效果较好的特点。     

载体对钯基选择加氢催化剂性能的影响

以常规浸渍法制备了一系列Pd基催化剂，考察载体结构、织构及组成对其加氢性能的影响。采用程序升温技术（TPR-H2、TPDCO）对催化剂进行了表征和相应分析。结果表明，Al2O3载体中以高温1100℃焙烧后形成的占晶型具有更高的乙烯选择性。Pd基催化剂的Al2O3载体预先修饰MgO或CeO2后，能获得良好的金属分散度和适宜的反应物的吸附及产物的脱附特性，使得在高氢／炔体积比下催化剂样品上乙烯收率也维持在80％左右。在非Al2O3型载体制备的催化剂中，与金属Pd存在强相互作用的TiO2载体制备的催化剂的催化性能优越，最优样的乙烯收率达到95％。催化剂表面的Pd^hHx物种和Pd—C结合能在很大程度上影响着H2吸附活化和乙烯脱附能力，这对选择加氢性能有至关重要的作用。     

一类极大极小优化问题的信赖域算法

借助于K-T条件和NCP函数,提出了处理一类极大极小优化问题的信赖域算法.数值实验结果表明该方法是行之有效的.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.