胡萝卜丁中维生素C在热风辅助射频干燥过程中降解的动力学模型

目的研究热风辅助射频(hot air-assisted radio frequency,HA-RF)干燥过程中维生素C随温度变化的降解动力学模型。方法在6.5 cm极板间距和60℃热风系统条件下进行HA-RF干燥,重点研究胡萝卜丁中维生素C在干燥过程中的降解动力学,包括脱氢抗坏血酸(dehydroascorbic acid,DHAA)和抗坏血酸(ascorbic acid,AA)。总维生素C含量采用2,4-硝基苯肼分光光度法测定,AA采用2,6-二氯吲哚酚滴定法测定。结果HA-RF干燥过程中维生素C的降解规律符合一级可逆模型,其降解活化能为40.54 kJ/mol。DHAA活化能为35.83 kJ/mol,表明DHAA的稳定性低于AA。结论本研究使用的干燥温度为62.5~77.5℃,较高的干燥温度下维生素C降解速率较高,较低处理温度下的降解过程具有更好的模型适应度(R2>0.98)。     

Experimental study on the permeability and self-healing capacity of geosynthetic clay liners in heavy metal solutions

Geosynthetic clay liners (GCLs), which have a very low permeability to water and a considerably high self-healing capacity, are widely used in liner systems of landfills. In this study, a series of experimental tests were carried out under complex conditions on typical commercial GCLs from China. In particular, the effects of pH values and lead ions (Pb²⁺) were tested in addition to other factors. The swelling properties of natural bentonite encapsulated between geotextile components in the GCLs were tested first. The swelling capacity was reduced rapidly at pH values < 3 and concentrations of Pb²⁺ >40 mM. Permeability tests on GCLs with different concentrations of lead ions were then performed by using the self-developed multi-link flexible wall permeameter, and data showed that increases in lead ion concentrations greatly improved the permeability. Finally, self-healing capacity tests were conducted on needle-punched GCLs under different levels of damage. Results showed that the GCLs have a good self-healing capacity with small diameter damage holes (2 mm, close to three times the original aperture), but with a damage aperture larger than 15% of the sample area, the self-healing capacity could not prevent leakage; hence, in certain situations it will be necessary to repair the damage to meet the anti-seepage requirement.     

提高深井硬地层钻井速度技术难点及对策

乌龙1井地层为南方海相沉积,地层古老、岩石硬度大、研磨性强、可钻性差、地层倾角大(最大为80°)井斜难以控制、蹩跳钻严重,制约了该地区深井钻井速度。文章介绍了解决提高钻井速度这一瓶颈问题,从深井优快钻井及其配套技术、硬地层钻进的钻头优选、优化钻井参数、引用新技术、新工艺、新工具等方面进行了探索,钻井速度有了大幅度地提高,对类似井具有一定的借鉴作用。     

基于形态学top-hat算子的多传感器图像融合

本文根据形态学top-hat算子能够提取图像中极大值与极小值区域的特点,将其应用于多传感器图像融合的两个重要领域——多聚焦图像融合和高分辨、多光谱图像融合.实验中将本文方法与Laplacian塔型变换、子波变换、主分量分析等方法进行了比较,结果表明本文所提的基于top-hat算子的融合方法具有优越的性能,拓广了top-hat算子的应用范围.     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

椰子油甲酯化法合成烷基醇酰胺

以国产椰子油为原料,在碱性催化剂作用下先甲酯化再缩合制备烷基醇酰胺,通过多次平行实验,确立了最佳反应条件:甲酯化反应的油醇比(mol)为1:5,催化剂氢氧化钾用量为剂油比(w)0.07:1,反应时间1小时;缩合反应的酯胺比(mol)为1:1.15,催化剂氢氧化钾用量为剂酯比(w)0.01:1,反应温度100～110℃,反应压力40～50mmHg,反应时间3.5小时.     

ZnGa2O4纳米晶的制备和结构表征

采用喷射共沉淀法制备了ZnGa2O4 纳米晶，XRD、SEM和TEM结构分析结果表明，喷射共沉淀法制备的ZnGa2O4的纳米晶颗粒细小均匀，形状完整，与化学共沉淀法相比，粒子尺寸明显减小，小于10nm，同时ZnO杂相峰消失，分析了喷射共沉淀法的机理，并对实验结果进行了解释。