Mass transfer in polycrystalline ytterbium monosilicate under oxygen potential gradients at high temperatures

Mass transfer in polycrystalline Yb₂SiO₅ wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb₂SiO₅ were compared with those of the other line compounds such as Yb₂Si₂O₇ and Al₂O₃ based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes.     

Multimodal sensing and active continuous closed‐loop feedback for achieving reliable manipulation in the outdoor physical world

The use of field robots can greatly decrease the amount of time, effort, and associated risk compared to if human workers were to carryout certain tasks such as disaster response. However, transportability and reliability remain two main issues for most current robot systems. To address the issue of transportability, we have developed a lightweight modularizable platform named AeroArm. To address the issue of reliability, we utilize a multimodal sensing approach, combining the use of multiple sensors and sensor types, and the use of different detection algorithms, as well as active continuous closed‐loop feedback to accurately estimate the state of the robot with respect to the environment. We used Challenge 2 of the 2017 Mohammed Bin Zayed International Robotics Competition as an example outdoor manipulation task, demonstrating the capabilities of our robot system and approach in achieving reliable performance in the fields, and ranked fifth place internationally in the competition.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.     

4*4 directional coupler switch matrix with an InGaAlAs/InAlAs multiquantum well structure

A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.<>     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Growth of Potassium Titanate Fibers in Flowing N2 Gas

The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N₂ gas flowing at 5.2×10^-4 m/s.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE

A transceiver PIC consisting of a DFB-LD, a receiver PD and a Y-shaped branch waveguides is realized by in-plane bandgap energy controlled selective MOVPE. Both active and passive core layers are formed in one step selective growth, and complicated fabrication procedure is no longer required. More than 1 mW fiber coupled power and 7 GHz receiver bandwidth are obtained. The modulation and detection operations at 500 Mb/s are successfully demonstrated.     

Stabilization of inter-area and/or oscillatory modes in large-scale power system by voltage impedance power system (VIPS) apparatus based on decentralized control scheme

New technologies such as power electronics have made it possible to change continuously the impedance of a power system not only to control power flow but also to enhance stability. A power system incorporating a variable impedance apparatus such as a variable series capacitor (VSrC) and high-speed phase shifter (HSPS) is called VIPS (Variable Impedance Power System) by the authors. This paper proposes a novel control method of VIPS apparatus such as VSrC and HSPS installed at an interconnecting point for stabilizing inter-area unstable and/or oscillatory modes. The proposed design method of the control system is a kind of hierarchical decentralized control method of a large-scale power system based on a Lyapunov function. Under the proposed control scheme, each subsystem can be stabilized independently by local controllers such as AVR, speed governor and PSS, and then the whole interconnected system can be stabilized by VIPS apparatus taking into account interactions between subsystems. The effectiveness and robustness of the VIPS apparatus control are shown by numerical examples with model systems including a large-scale power system.     

Luteococcus japonicus gen. nov., sp. nov., a new gram-positive coccus with LL-diaminopimelic acid in the cell wall

A new gram-positive, nonmotile coccus is described. Strains IFO 12422T (T = type strain) and IFO 15385 in the Institute for Fermentation, Osaka, culture collection, which were isolated from soil and water, respectively, have the following chemotaxonomic characteristics: menaquinone MK-9(H4); G + C content of DNA of 67 mol%; and LL-diaminopimelic acid, alanine, glycine, and glutamic acid in a molar ratio of ca. 1:2:1:1 (type A3 gamma). Mycolic acids are not present. The taxonomic characteristics of these organisms are different from those of previously described gram-positive, high-G + C-content cocci. The partial 16S rRNA sequence indicated that IFO 12422T represents a distinct line of descent among gram-positive bacteria with a high G + C content. The name Luteococcus japonicus gen. nov., sp. nov. is proposed. The type strain is strain IFO 12422.