Object-based hyperspectral image classification using a new latent block model based on hidden Markov random fields

Pattern Analysis and Applications - Efficient high-dimensional analyses of hyperspectral datasets and their utilization within classification algorithms is a popular topic in the field of data...     

Design of bandpass–bandpass diplexers using rectangular-, T-, and L-shaped resonators for hybrid power amplifier and 5G applications

Analog Integrated Circuits and Signal Processing - In this paper, two bandpass–bandpass diplexers, based on L-, T- and rectangular-shaped resonators are designed and analyzed, which are used...     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Angiotensin II receptor type 1 mRNA is upregulated in atria of patients with end-stage heart failure

There is increasing evidence that pathological changes in the myocardium during chronic heart failure (CHF) are partly regulated through the activation of the renin-angiotensin system (RAS), an effect mediated by the angiotensin II type 1 receptor (AT1R). We examined the expression of cardiac AT1R mRNA in normal (atria, n=7; ventricle, n=3) and end-stage CHF human hearts (atria, n=8; ventricle, n=14). Tissue was snap-frozen immediately after explantation during orthotopic cardiac transplantation; control specimens were obtained from healthy donor hearts rejected for technical reasons. Northern blots of purified total mRNA from each tissue were hybridized with a random primed radiolabeled probe for the coding sequence of AT1R. Stringent conditions were used for both hybridization (5X SSC, 65 degrees C) and washing (0.5X SSC, 0.1% SDS, 65 degrees C) of the membrane. Left and right atrial tissue showed low levels of AT1R mRNA expression in the controls, with statistically significant upregulation of expression in tissue from pathological hearts; CHF atria 1.28+/-0.86 optical density (OD) units, control atria 0.56+/-0.31 OD units, P=0.05 (mean+/-s.d.). There were undetectable levels in ventricles from either control (2/2) or dilated hearts (7/7). The results were independent of the etiology of the heart failure and suggest that increased levels of atrial AT1R mRNA may occur in response to elevated atrial pressures in heart failure.     

Removal of iron from milk of lime to produce pure precipitated calcium carbonate

ABSTRACT

Milk of lime (MOL) suspension is widely utilized in many industries; however, in some of the applications, such as the production of precipitated calcium carbonate (PCC), the suspension must be of high purity and quality. In other words, the amounts of iron and magnesium should be so little so that the final PCC product would be of high quality. The effects of initial temperature, quicklime particle size, amount of initial solid present, agitation rate, and time on the recovery of hydrated lime and iron/magnesium reduction efficiency were investigated through a central composite design (CCD) of experiments. The iron reduction efficiency and the weight recovery of hydrated lime were obtained as 91% and 98.5%, respectively. The reduction of magnesium was not significant in this stage. Moreover, approximately the whole existing SiO₂ was eliminated.     

F-LEACH: a fuzzy-based data aggregation scheme for healthcare IoT systems

The Journal of Supercomputing - Internet of Things (IoT) is an emerging paradigm that consists of numerous connected and interrelated devices with embedded sensors, exchanging data with each other...     

Ionization coefficient of monolayer graphene nanoribbon

A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy E_t and the distance travelled by electron gaining E_t. In addition, ionization threshold energy is semi-analytically modelled for GNR. During modelling, we justify our assumptions using analytical modelling and comparison with simulation. Furthermore, it is shown that conventional silicon models are not valid for calculation of ionization coefficient of GNR. Finally, the profile of ionization is presented using the proposed models and the results are compared with that of silicon.     

Recent Developments in Predicting Impact and Shock Sensitivities of Energetic Materials （英）

Empirical, quantum mechanical and artificial neural network methods are three usual methods in recent years that were used to predict sensitivity of different classes of high explosives. Some recent developments in predicting sensitivity by various methods are reviewed and discussed for various classes of energetic materials.