Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Formation of β-Si3N4 Coatings by Chemical Vapor Deposition

BetaSi₃N₄ coatings were obtained by chemical vapor deposition in a fused-silica reaction tube by outside heating of the system SiCl₄-NH₃-N₂ at a deposition temperature (reaction tube temperature) of 1300°C, whereas α- and α+β-phase coatings were obtained at depositon temperatures of 1150° and 1250°C, respecively. Formation of β-phase coatings at relatively low temperatures is explained in terms of the effect of a catalytic impurity, SiO vapor from the reaction tube. The X-ray diffraction patterns and sulface morphologies of the coatings were studied.     

Properties of Va metal-B films prepared by r.f.-sputtering

Nb_100−x B _x alloy films were prepared by the r.f.-sputtering method in the chemical composition range of 30 ≦x ≦ 76. Nb_100−x B _x (30 ≦x ≦ 54) films consisted of the amorphous state, and NbB₂ crystal phase was observed on Nb_100−xB_x (67 ≦x ≦ 76) films. A remarkable preferred orientation with the (001) plane of NbB₂ in parallel to the film surface was observed on Nb₃₃B₆₇ film. d.c. electrical conductivity of Nb_100−xB_x (30 ≦x ≦ 76) films decreased with increasing content of boron in the range from 7.3×10³ to 7.6 ×10²Ω⁻¹cm⁻¹. Micro-Vickers hardness of Nb_100−x B _x (30 ≦x ≦ 76) films exhibited the values of 1070 to 2060 kg mm².