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1.
Reduction of flash generated in a gas vent is of great concern for manufacturers of electronic parts. The present study proposes a theoretical model for flash generation through consideration of flow characteristics in a gas vent. The model predicts the factors controlling flash, i.e., material parameters such as zero‐shear viscosity, crystallization temperature, thermal conductivity, and heat capacity, and process parameters such as injection and mold wall temperatures, packing pressure, and the clearance of a gas vent. On the other hand, we measure the amount of flash generated in the molding of poly(phenylene sulfide) (PPS) composites containing glass fiber and spherical fillers (CaCO3 or Al2O3). Flash reduces with decreasing size of spherical fillers. These experimental data are successfully interpreted using the flash model. Polym. Eng. Sci., 45:198–206, 2005. © 2005 Society of Plastics Engineers  相似文献   
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The effects of carbon-fiber chips and carbon brushes as additives on the thermal conductivity enhancement of phase change materials (PCMs) using in latent heat thermal energy storage are investigated experimentally and numerically by considering the wall effect of the additives. The carbon-fiber chips are effective for improving the heat transfer rate in PCMs. However, the thermal resistance near the heat transfer surface is higher than that for the carbon brushes. As a result, the overall heat transfer rate for the fiber chips is lower than that for the carbon brushes. Consequently, the carbon brushes are superior to the fiber chips for the thermal conductivity enhancement under the present experimental conditions. The carbon brushes are moreover applied to the packed beds of particles to overcome their low thermal conductivity in chemical heat pump/storage. The carbon brushes essentially improve the heat transfer characteristics in the packed beds, though the thermal resistance is observed because the particles obstruct contact between the fibers and the heat transfer surfaces.  相似文献   
4.
Functional magnetic resonance imaging (fMRI) is capable of detecting task-induced blood oxygenation changes using susceptibility sensitive pulse sequences such as gradient-recalled echo-planar imaging (EPI). The local signal increases seen in the time course are believed to be due to an increase in oxygen delivery that is incommensurate with oxygen demands. To help isolate the sources of functional signal changes, the authors have incorporated various forms of diffusion weighting into EPI pulse sequences to characterize the apparent mobility of the functionally modulated protons. Results suggest that the majority of the functional signal at 1.5 T arises from protons that have apparent diffusion coefficients that are approximately four or five times higher than that of brain tissue. This implies that significant functional signal sources are either protons within the vascular space or protons from the perivascular space that is occupied by cerebrospinal fluid.  相似文献   
5.
The authors describe a novel design concept for enhancement (E) and depletion (D) mode FET formation using i-AlGaAs/n-GaAs doped-channel hetero-MISFET (DMT) and a novel self-aligned gate process technology for submicrometer-gate DMT-LSIs based on E/D logic gates. 0.5-μm gate E-DMTs (D-DMTs) with a lightly doped drain (LDD) structure show an average Vt of 0.18 (-0.46) V, a Vt standard deviation of 22.6 (24.9) mV, and a maximum transconductance of 450 (300) mS/mm. The Vt shift is less than 50 mV with a decrease in gate length down to 0.5 μm. The gate forward turn-on voltage Vf is more than 0.9 V, i.e. about 1.6 times that for MESFETs. This superiority in V f, preserved in the high-temperature range, leads to an improvement in noise margin tolerance by a factor of three. In addition, 31-stage ring oscillators operate with a power consumption of 20 (1.0) mW/gate and a propagation delay of 4.8 (14.5) ps/gate. Circuit simulation based on the experimental data predicts 140 ps/gate and 1 mW/gate for DMT direct-coupled FET logic circuits under standard loading conditions. DMTs and the technology developed here are very attractive for realizing low-power and/or high speed LSIs  相似文献   
6.
The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.  相似文献   
7.
Several onium cations having vinyl group formed ionic liquids after coupling with bis(trifluoromethanesulfonyl)imide. These monomers were polymerized, and the relation between onium cation structure and properties of thus polymerized ionic liquids was investigated. The polymerized ionic liquid having ethylimiadzolium cation unit showed the highest ionic conductivity of around 10−4 S cm−1 at 30 °C among the obtained polymers reflecting the lowest glass transition temperature of −59 °C. These polymers were thermally stable and their decomposition temperatures were about 350 °C. The ionic conductivity of the polymerized ionic liquids decreased by both the addition of lithium bis(trifluoromethanesulfonyl)imide and the polymerization in the presence of cross-linker. However, the polymerized ionic liquid having 1-methylpiperidinium cation structure showed good lithium ion transference number of 0.43 at room temperature.  相似文献   
8.
2-Dibutylamino-1,3,5-triazine-4,6-dithiol (DB) and a mixture of DB and triallylisocyanurate (TAIC) were used as a lubricant during steel wire drawing due to a dry process. DB gave a polymer film with 180 nm in thickness to wire surfaces during the wire drawing. The polymer film had a disulfide structure on the backbone and contained a small amount of DB monomer and olygomer. Molecular weight and polymer weight increased with the drawing rate. The mixture of DB and TAIC gave mainly a three-dimensional polymer film with 225 nm in thickness to wire surfaces during drawing. The polymer film insoluble in THF had mono and disulfide structures and contained a small amount of linear polymer, DB, and TAIC. Such tribological polymerizations are estimated as follows: DB produces dithiyl radicals on a nascent surface formed during drawing and in the presence of oxygen and heat. The dithiyl radicals were polymerized by coupling with each other to give disulfide bonds or added to allyl groups in TAIC to give monosulfide bonds. It is concluded that this technique should be possible to use for unifying metal processing and surface treatment. © 1995 John Wiley & Sons, Inc.  相似文献   
9.
Selective modification by ozonation for the surface of polyvinyl chloride (PVC) was evaluated to separate PVC from the other plastics, polyethylene terephthalate (PET), polycarbonate (PC) and polymethyl methacrylate (PMMA), with almost the same density as PVC by the froth flotation process. Ozonation could selectively decrease the contact angles of flexible PVC from 87.5 degrees to 68.4 degrees and rigid PVC from 90.3 degrees to 66.9 degrees, whereas little decreases in the contact angle were observed for other plastics. This would be due to the replacement of the chloride group on the surface of PVC, into hydrophilic functional groups; carbonyl, carboxyl and ester group. The PVC was successfully separated from the other plastics by the froth flotation process after the selective surface modification by ozonation.  相似文献   
10.
Transparent and highly oriented Ba2NaNb5O15 (BNN) thin films have been prepared by using metal alkoxides. A homogeneous precursor solution was prepared by the controlled reaction of NaOC2H5, Nb(OC2H5)5, and barium metal. The BNN precursor included a molecular-level mixture of NaNb(OC2H5)6 and Ba[Nb(OC2H5)6]2 in ethanol. The alkoxy-derived powder crystallized to a low-temperature phase, and then transformed to orthorhombic BNN (tungsten bronze) at 600°C. BNN precursor films on substrates crystallized to orthorhombic BNN at 800°C via the low-temperature phase. Highly (002) oriented BNN films of tungsten bronze structure were successfully prepared on MgO (100) substrates at 700°C by using BNN underlayer.  相似文献   
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