We present a new scheme for visibly-opaque but near-infrared-transmitting filters involving 7 layers based on one-dimensional ternary photonic crystals, with capabilities in reaching nearly 100% transmission efficiency in the near-infrared region. Different decorative reflection colors can be created by adding additional three layers while maintaining the near-infrared transmission performance. In addition, our proposed structural colors show great angular insensitivity up to ±60° for both transverse electric and transverse magnetic polarizations, which are highly desired in various fields. The facile strategy described here involves a simple deposition method for the fabrication, thereby having great potential in diverse applications such as image sensors, anti-counterfeit tag, and optical measurement systems.
A technique using a lifting scheme is presented for constructing compactly supported wavelets whose coefficients are composed of free variables locating in an interval. An efficient approach-based wavelet for image compression is developed by selecting the coefficients of the 9-7 wavelet filter and associated lifting scheme. Furthermore, the rationalised coefficients wavelet filter that can be implemented with simple integer arithmetic is achieved and its characteristic is close to the well known original irrational coefficients 9-7 wavelet filters developed by A. Cohen et al. (Commun. Pure Appl. Maths., vol.45, no.1, p.485-560, 1992). To reduce the computational cost of image coding applications further, an acceleration technique is proposed for the lifting steps. Software and hardware simulations show that the new method has very low complexity, and simultaneously preserves the high quality of the compressed image. 相似文献
This paper presents a comprehensive nonlinear model of the controlled constant voltage transformer also known as the ferroresonant transformer. Saturation is a normal mode of operation for this device. This paper derives an equivalent electrical circuit that relates to the physical structure of a typical design. The level of detail includes winding resistances, continuously nonlinear magnetizing inductances, tapped windings, and leakage inductances. The paper describes methods to extract the winding resistances, leakage inductances, and hysteresis loops of the transformer and how to fit the latter into single-valued nonlinear functions. The paper compares computer simulation results of the model with those obtained analytically and experimentally. The results show that the derived circuit will be very useful for designers of the ferroresonant transformer, which is used in uninterruptible power supplies. 相似文献
Indoor infrared communication systems is one of the possible ways of offering data rates in excess of 100 Mbit/s without the need for wiring. Multiple users can share an infrared channel by code division-multiple access (CDMA) techniques. However, the CDMA system performance is limited by both background noise and co-channel interference. In this paper we study the use of angle diversity for mitigating the effects of the noise and interference. The system considered uses on-off shift keying modulation with multibeam transmitters and imaging receivers. The overall system performance for different diversity combining techniques is evaluated and compared to a system without diversity. Numerical results for a 2-user CDMA system indicate that signal to noise and interference ratio (SNIR) improvement (over systems with no diversity) of 5 dB is obtained for at least 50% of an ensemble of 10000 sample evaluations. The generalized selection combining (GSC)--a new diversity technique yet to be implemented for infrared systems--offers the best performance even with its reduced complexity. 相似文献
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献