Development of core mode blocker with H/sub 2/-loaded Ge-B codoped fibres

A novel fabrication method of the core mode blocker by exposing H/sub 2/-loaded Ge-B codoped fibres to local electric arc discharge for application to the LPFGs-based tunable all-fibre bandpass filter with 6.5 nm bandwidth and 40 nm tuning range is presented.     

Effect of oxygen flow rate on the structural and electrochemical properties of lithium nickel oxides synthesized by the sol–gel method

The structural and electrochemical properties of LiNiO₂ powders were investigated as a function of the oxygen flow rate employed in the preparation of lithium nickel oxide. It was found that oxygen played an important role in the synthesis of highly crystallized LiNiO₂(R3¯m). In the crystallization process of LiNiO₂, a deficiency of oxygen in the calcination reactor induced the formation of impurities and cubic rock-salt structure (Fm3m) in LiNiO₂ powders. For LiNiO₂ prepared at higher oxygen flow rates, the electrode delivered high discharge capacities with relatively good retention rates. But very low electrode capacity was obtained from LiNiO₂ prepared at lower oxygen flow rates.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

Synthesis and electrochemical characterization of a new Se-doped spinel material for lithium secondary batteries

A new Se-doped spinel material, LiAl_0.18Se_0.02Mn_1.8O₄ powder with a phase-pure polycrystalline was synthesized by a sol–gel method. The material in the 3 V region (2.4 3.5 V) and both the 3 and 4 V region (2.4 4.4 V) initially deliver a discharge capacity of 81 and 178 mA h g^–1 which increase with cycling to reach 110 and 204 after 50 cycles, respectively. The material shows excellent cycleability in the 4 V region (3.0 4.4 V) with almost no capacity loss. The structural integrity of the Se-doped spinel was characterized by charge–discharge cycling tests and X-;ray diffraction.     

Effect of Nitrogen Atmosphere on the Densification of a 3-mol%-Yttria-Doped Zirconia

The densification behavior of a 3-mol%-Y₂O₃-doped ZrO₂ (3Y-ZrO₂) has been investigated under N₂ and O₂ atmospheres. Powder compacts have been sintered at 1550° and 1400°C for various times. The density of the specimen sintered at 1550°C is higher in N₂ than in O₂, while the contrary result is obtained in the case of the specimen sintered at 1400°C. Such results can be explained in terms of nitrogen solubility and oxygen vacancy in a ZrO₂ matrix. Because nitrogen solubility into the ZrO₂ increases with an increase in heat-treatment temperature, leading to the formation of oxygen vacancy, the densification rate becomes higher. The present study thus shows evidence of nitrogen solubility into the ZrO₂ and its role on the densification behavior of 3Y-ZrO₂.     

Suppressing harmonic vibrations of a miniature cryogenic cooler using an adaptive tunable vibration absorber based on magneto-rheological elastomers

This paper presents dynamic performances of an adaptive tunable vibration absorber (TVA) designed to suppress the main harmonic disturbance of a miniature linear cryogenic cooler, which is being used in space applications such as an observation satellite. The adaptive TVA employs a magneto-rheological elastomer (MRE) for a variable stiffness element. This study first investigates the shear modulus change of MRE samples with respect to the magnetic flux density, which varies through the alignment of particle chains. The MRE with the maximal shear modulus change is mounted for the TVA on a prototype cooler, which emulates the characteristics of a miniature cryogenic cooler. Using the test setup, a series of vibration tests are performed to evaluate the performance and efficacy of the MRE TVA and its re-tuning ability. The experimental results show that the MRE TVA is able to robustly suppress the vibration of the cooler even when the frequency of resonant vibration is changed up to 87% from its initial frequency.     

Ultrastructural investigation of intact orbital implant surfaces using atomic force microscopy

This study examined the surface nanostructures of three orbital implants: nonporous poly(methyl methacrylate) (PMMA), porous aluminum oxide and porous polyethylene. The morphological characteristics of the orbital implants surfaces were observed by atomic force microscopy (AFM). The AFM topography, phase shift and deflection images of the intact implant samples were obtained. The surface of the nonporous PMMA implant showed severe scratches and debris. The surface of the aluminum oxide implant showed a porous structure with varying densities and sizes. The PMMA implant showed nodule nanostructures, 215.56 ± 52.34 nm in size, and the aluminum oxide implant showed crystal structures, 730.22 ± 341.02 nm in size. The nonporous PMMA implant showed the lowest roughness compared with other implant biomaterials, followed by the porous aluminum oxide implant. The porous polyethylene implant showed the highest roughness and severe surface irregularities. Overall, the surface roughness of orbital implants might be associated with the rate of complications and cell adhesion. SCANNING 33: 211–221, 2011. © 2011 Wiley Periodicals, Inc.     

Control of the leakage current in SrTiO3 films by acceptor doping

Stoichiometric SrTiO3 (STO) films doped with Fe or Cr were prepared by r.f. magnetron sputtering technique. The effects of Fe or Cr doping in the SrTiO3 films were studied on the leakage current property which was discussed by defect chemistry. The experimental results can be explained by a model in which oxygen vacancies are the key defects responsible for the leakage current. Acceptor doping, with a small concentration of Fe or Cr, has led to a substantial improvement to 10–9 order in the leakage current density. Above the concentration of 0.010.02 mol% Fe2O3, Cr2O3, however, as the concentration increased, the leakage current increased. These acceptors in Ti4+ site are expected to electrically compensate for donor species such as oxygen vacancies, thereby reducing the concentration of mobile carriers that contribute to electrical conduction. Consequently, acceptor doped STO films have been shown to be superior to undoped films for applications requiring high leakage resistance, such as dynamic random access memory capacitors. © 1998 Chapman & Hall