Constructing magnetically recoverable CdS/CaFe2O4 P–N heterojunctions for enhanced photoelectrochemical properties towards H2 evolution reaction

A novel CdS/CaFe₂O₄ (CS/CFO) heterogeneous p-n junction was created by thermal deposition of CaFe₂O₄ nanoparticles on CdS rods. The CS/CFO hetero-structured photocatalysts exhibited increasingly efficient visible light harvesting compared to the bare CdS. The CS/CFO composites also presented higher photocurrent and slower decay of photoluminescence, suggesting a better separation of the photo-generated electrons and holes. The photocatalytic H₂ evolution quantity on the optimized CS/CFO composite from water in the presence of ethanol was up to 2200 μmol after 3-h visible light illumination, which is more than twice that of the pristine CdS. The chemical interaction between CdS and CaFe₂O₄ was confirmed by the shifts in the XPS peaks, which made it possible for the charge carriers to transfer across the p-n junction interface. This research highlights the importance of forming an interfacial p-n heterojunction between two semiconductors for efficient charge separation and improved photocatalytic performance.     

Optimized microwave absorption properties by tailoring the morphology of carbon coated TiC nanoparticles by N2 pressure

Increasing the dielectric loss capacity plays an important role in enhancing the electromagnetic absorption performance of materials. It remains a challenge to simultaneously introduce multiple types of dielectric losses in the material. In this work, we show that the atomic and interfacial dipole polarizations can be simultaneously enhanced by substituting N species into both carbon coating layers and bulk TiC lattices of a core-shell TiC@C material. Additionally, substitution of N species results more exposed TiC(111) facets and refines the TiC grain sizes in the bulk material, which is beneficial for enhancing the scattering of the external electromagnetic waves. The maximum reflection loss of the N substituted TiC@C material is measured as ?47.1 dB with an effective absorbing bandwidth of 4.83 GHz at 1.9 mm, which illustrates a valuable way to further tuning the electromagnetic absorption performance of this type of materials.     

Advances in the in vitro digestion and fermentation of polysaccharides

In vitro digestion models are widely used to study the structural changes, digestion and release of food components under simulated gastrointestinal conditions. As compared to the in vivo digestion tests, the in vitro digestion reflects the digestion and utilisation of food after ingestion and has the advantages of being time consuming, inexpensive, reproducible and free from moral and ethical restrictions. This study reviewed the current research studies on the in vitro simulated digestion of polysaccharides conducted in the last 5 years and focused on the oral, gastric and intestinal digestion models, with the aim of providing a basis for the further testing of changes in the content, structure and active ingredients of polysaccharides before and after digestion.     

Microstructures and Phase Transition Points of As-Cast Mg-Zn-Y System Alloys

As-east mierostruetures and their distribution of Mg-Zn-Y ternary alloy with high magnesium, low zinc and yttrium were examined using Nikon Epiphot optical microscopy （OM）, RigakuD/max-3C X- ray diffraetion （XRD）, and JEOL JSM-6700F scanning electron microscopy （SEM） equipped with an energydispersive X-ray spectroscopy （EDS）. In the as-east mierostructures, Yttrium and zinc tend to segregate at grain boundaries,     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

三相全控桥式整流电路实验装置的研制

介绍了开发三相全控桥式整流电路实验装置的背景;叙述了TC787芯片的内部结构、工作原理、特点及芯片的各个管脚的功能;详细介绍了该实验装置的触发电路的设计思路、设计结果和工作原理;介绍了该实验装置的主电路部分的结构和特点。该实验装置性能可靠,符合本科生实验要求。     

V波段小型化低相噪频率综合器

本文研究了一种V波段超小型低相噪频率综合器,研制了L段捷变频频综、Ku波段取样锁相源、上变频组件、倍频器等四个小型化组件.为了得到较低的相位噪声和捷变频速度,本捷变频频综采用上变频-倍频方案,其中DRO PLS保证低相位噪声性能,L波段捷变频频综保证捷变频功能.该频综尺寸为100×80×30mm³,相位噪声低于-86dBc/Hz(1kHz),捷变频时间小于40μs,杂波抑制优于-60dBc.     

同位素中子源活化瞬发分析装置

一、基本原理自六十年代中期以来,中子活化瞬发γ射线元素分析技术(PNAA)得到人们广泛重视。与通常的中子活化分析(NAA)技术相比,它分析的是样品中的主要成分,若用同位素中子源,还可进行实时在线连续测定及现场分析。PNAA技术是用热中子与待测元素发生中子俘获反应,处于激发态的产物核在瞬间