Comparison of yield and metabolites according to the types of hilling materials utilized during Glehnia littoralis sprout vegetable cultivation

Food Science and Biotechnology - Various hilling materials (rice hulls, pine sawdust, and perlite) were compared to produce sprout vegetables using beach silvertop (Glehnia littoralis Fr. Schm. ex...     

Role of additives in fabrication of soy-based rigid polyurethane foam for structural and thermal insulation applications

Environmental concerns continue to pose the challenge to replace petroleum-based products with renewable ones completely or at least partially while maintaining comparable properties. Herein, rigid polyurethane (PU) foams were prepared using soy-based polyol for structural and thermal insulation applications. Cell size, density, thermal resistivity, and compression force deflection (CFD) values were evaluated and compared with that of petroleum-based PU foam Baydur 683. The roles of different additives, that is, catalyst, blowing agent, surfactants, and different functionalities of polyol on the properties of fabricated foam were also investigated. For this study, dibutyltin dilaurate was employed as catalyst and water as environment friendly blowing agent. Their competitive effect on density and cell size of the PU foams were evaluated. Five different silicone-based surfactants were employed to study the effect of surface tension on cell size of foam. It was also found that 5 g of surfactant per 100 g of polyol produced a foam with minimum surface tension and highest thermal resistivity (R value: 26.11 m²·K/W). However, CFD values were compromised for higher surfactant loading. Additionally, blending of 5 g of higher functionality soy-based polyol improved the CFD values to 328.19 kPa, which was comparable to that of petroleum-based foam Baydur 683.     

Electrocatalytic Reduction of CO2 to Ethylene by Molecular Cu‐Complex Immobilized on Graphitized Mesoporous Carbon

The electrochemical reduction of carbon dioxide (CO₂) to hydrocarbons is a challenging task because of the issues in controlling the efficiency and selectivity of the products. Among the various transition metals, copper has attracted attention as it yields more reduced and C2 products even while using mononuclear copper center as catalysts. In addition, it is found that reversible formation of copper nanoparticle acts as the real catalytically active site for the conversion of CO₂ to reduced products. Here, it is demonstrated that the dinuclear molecular copper complex immobilized over graphitized mesoporous carbon can act as catalysts for the conversion of CO₂ to hydrocarbons (methane and ethylene) up to 60%. Interestingly, high selectivity toward C2 product (40% faradaic efficiency) is achieved by a molecular complex based hybrid material from CO₂ in 0.1 m KCl. In addition, the role of local pH, porous structure, and carbon support in limiting the mass transport to achieve the highly reduced products is demonstrated. Although the spectroscopic analysis of the catalysts exhibits molecular nature of the complex after 2 h bulk electrolysis, morphological study reveals that the newly generated copper cluster is the real active site during the catalytic reactions.     

Effect of Initial Grain Size on Friction Stir Weldability for Rolled and Cast CoCrFeMnNi High-Entropy Alloys

Metals and Materials International - This study investigated the influence of the initial grain size on the plastic deformation and tunnel defects that occurred from friction stir welding of...     

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.     

A new method to suppress harmonics using /spl lambda//4 bias line combined by defected ground structure in power amplifiers

A new /spl lambda//4 bias line combined by a dumb-bell shaped defected ground structure (DGS) is proposed to suppress harmonics in power amplifiers. The proposed DGS bias line maintains the required high impedance even after DGS is inserted, while the width and length of the /spl lambda//4 bias line are broader and shorter than those of conventional bias lines. When the DGS bias line is used in power amplifiers, the third harmonic components as well as the second harmonic are reduced, because of the increased slow-wave effect over wide harmonic band. It is shown that the reduction of the third harmonic component, the improvement of 1 dB compression point, and power added efficiency are 26.5 dB, 0.45 dB, and 9.1%, respectively.     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.