Wideband and compact folded loop antenna

A simple and successful design method that yields a wideband and compact antenna without a ground plane is proposed. The antenna, referred to as the folded loop antenna, can, with the right parameters, achieve wideband characteristics. Calculated and measured results agree well and more than 50% bandwidth (return loss /spl les/-10 dB) is obtained.     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.     

Heat Capacity of 3He Solid Film on Graphite in Magnetic Fields

Heat capacities of a submonolayer ³He solid film adsorbed on a graphite surface are measured in magnetic fields up to 400 Oe. The measured heat capacity shifts to higher temperatures with an increasing magnetic field. The amplitudes of the shifts are twenty times larger than the magnitude of the Zeeman energy, which is anomalously large. With regard to the origin of these large shifts, the reduction of frustrations and the weakening of the competition between multiple spin exchange interactions are discussed.     

Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy

GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Wavelength-selective fused fiber couplers utilizing fielddifference between core and cladding modes

It is shown that wavelength-selective fused taper couplers can be made by using the large difference in field distribution, between core and cladding modes. It is evident from the calculation results that fibers with a high-index difference and a thin outside diameter are necessary to fabricate the couplers. Fused taper couplers are made of thin fibers with a cladding diameter of 66.0 μm and an index difference of 0.84%. The splitting ratio of the coupler obtained is more than 20 dB in the 1.53-μm region and less than -20 dB in the 0.8 to 1.0-μm region. The loss is less than 0.2 dB and 0.4 dB in the 1.53-μm and the 0.8 to 1.0-μm regions, respectively     

Crystallization process and magnetic properties of Fe100−x,B x (10 ≦ × ≦ 35) amorphous alloys and supersaturated state of boron inα-Fe

Amorphous specimens of Fe_100–x B _x were prepared in the range 10 × 35 at % B by a single-roller method. The crystallization process and the boron concentration dependence of the Curie temperature were examined by differential scanning calorimetry, X-ray diffraction, Mössbauer spectroscopy and magnetic measurements. Two-step crystallization was observed in specimens with× < 17: amorphous amorphous + boron-supersaturated b c c phase (-Fe(B)) t-Fe₃B +-Fe. A single-Fe(B) phase was not observed. The transition temperature from t-Fe₃B to stable (-Fe + t-Fe₂B) sensitively depends on the boron content in the alloys. The crystallization temperature (T _x) of the amorphous alloys was almost unchanged for 17 × 31, but increased remarkably at high boron concentrations of× 33, where the decomposition products consisted of t-Fe₂B and o-FeB. The Curie temperature (T _c) of the amorphous phase was as low as 480 K at× = 10, increased with increasing boron content up to 820 K and then decreased in the high boron concentration alloys of× > 28. A single-Fe(B) phase was not detected in the as-quenched specimens of× = 8 and 10. The phase coexisted with the o-Fe₃B and amorphous phases. The lattice parameter of the phase was 0.2861₀ nm which was smaller than that of pure iron by 2/1000, indicating the substitutional occupation of boron atoms in the b c c lattice.     

Effect of cation structure on the electrochemical and thermal properties of ion conductive polymers obtained from polymerizable ionic liquids

Several onium cations having vinyl group formed ionic liquids after coupling with bis(trifluoromethanesulfonyl)imide. These monomers were polymerized, and the relation between onium cation structure and properties of thus polymerized ionic liquids was investigated. The polymerized ionic liquid having ethylimiadzolium cation unit showed the highest ionic conductivity of around 10⁻⁴ S cm⁻¹ at 30 °C among the obtained polymers reflecting the lowest glass transition temperature of −59 °C. These polymers were thermally stable and their decomposition temperatures were about 350 °C. The ionic conductivity of the polymerized ionic liquids decreased by both the addition of lithium bis(trifluoromethanesulfonyl)imide and the polymerization in the presence of cross-linker. However, the polymerized ionic liquid having 1-methylpiperidinium cation structure showed good lithium ion transference number of 0.43 at room temperature.