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Liam Riordan 《电子设计技术》2006,13(9):110-110,112
高速DAC,比如模拟器件(AnalogDevices)公司的AD9776/78/79TxDAC系列,能提供差分输出,但对于低端交流电应用或高精度电平设置应用,配备差分转换电路的单端电流输出DAC提供了一种新颖的方法来生成差分波形控制功能。图1中的基本电路组合了电流输出DAC(即IC1,如8位AD5424D A C)和一个单端至差分运算放大级IC2、IC3A、IC3B——来产生要求的输出。对于双电源应用,可选择DAC的单极工作模式来达到DAC的最优性能。DAC利用单一运算放大器提供了双象限倍增或单极输出电压摆动。DAC的输出需要缓冲器,这是因为对施加到DAC输入端的代…  相似文献   
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Microstructural origins for reduced weak-link behavior in high-Jc melt-processed YBCO, spray pyrolyzed thick films of Tl-1223, metallic precursor Y-124 polycrystalline powder-in-tube (PIT) wires and PIT Bi-2212/2223 are discussed. Since the materials studied are the highest Jc, polycrystalline, high-Tc superconductors fabricated worldwide, the results provide important guidelines for further improvements in superconducting properties, thereby enabling practical applications of these materials. It is found that strongly linked current flow within domains of melt-processed 123 occurs effectively through a single crystal path. In c-axis oriented, polycrystalline Tl-1223 thick films, local in-plane texture has been found to play a crucial role in the reduced weak-link behavior. Formation of “colonies” of grains with a common c-axis and modest in-plane misorientation was observed. Furthermore, a colony boundary in general has a varying misorientation along the boundary. Large regions comprised primarily of low angle boundaries were observed. Percolative transport through a network of such small angle boundaries appears to provide the nonweak-linked current path. Although powder-in-tube BSCCO 2212 and 2223 also appear to have a “colony” microstructure, there are some important differences. Colonies in BSCCO consist of stacks of grains with similar c-axis orientation in contrast to colonies in Tl-1223 films where few grains are stacked on top of one another. Furthermore, most grains within a colony in BSCCO have the same lateral dimensions as that of the colony, resulting largely largely in “twist” boundaries. Further microstructural characterization of high-Jc PIT 2212 and 2223 is currently underway. In the case of Y-124 wires, weak macroscopic in-plane texture is found. Additional measurements are underway to determine if a sharper, local in-plane texture also exists. It is found that in three of the four types of superconductors studied, reduced weak-link behavior can be ascribed to some degree of biaxial alignment between grains, either on a “local” or a “global” scale.  相似文献   
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The characteristics of SF6/He plasmas which are used to etch Si3N4 have been examined with experimental design and modeled empirically by response-surface methodology using a Lam Research Autoetch 480 single-wafer system. The effects of variations of process gas flow rate (20-380 sccm), reactor pressure (300-900 mtorr). RF power (50-450 W at 13.56 MHz), and interelectrode spacing (8-25 mm) on the etch rates of LPCVD (low-pressure chemical vapor deposition) Si3N4, thermal SiO2, and photoresist were examined at 22±2°C. Whereas the etch rate of photoresist increases with interelectrode spacing between 8 and 19 mm and then declines between 19 and 25 mm, the etch rate of Si3N 4 increases smoothly from 8 to 25 mm, while the etch rate of thermal SiO2 shows no dependence on spacing between 8 and 25 mm. The etch rates of all three films decrease with increasing reactor pressure. Contour plots of the response surfaces for etch rate and etch uniformity of Si3N4 as a function of spacing and flow rate at constant RF power (250 W) display complex behavior at fixed reactor pressures. A satisfactory balance of etch rate and etch uniformity for Si3N4 is predicted at low reactor pressure (~300 mtorr), large electrode spacing (12-25 mm), and moderate process gas flow rates (20-250 sccm)  相似文献   
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The eighth sentences shpuld read as follows. rFosLZ–GSTweakly associates beyond a dimer (Ka –4x104 M–1)and rJunLZ–GST associates indefinitely (Ka –4x105M–1), consistent with an isodesmic model of association.  相似文献   
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