A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

ASON实际组网中架构及演进方式分析

对在实际组网中选择合理的ASON架构和保护方式作了相应分析，并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见，     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts.     

A medium-access control protocol for a cellular packet CDMAcarrying multirate traffic

We propose and evaluate a medium-access control (MAC) protocol for synchronous cellular packet direct-sequence code-division multiple-access (DS/CDMA). The protocol is designed for handling a variety of multimedia traffic types in an integrated wireless-access network (IWAN). For instance, the protocol is suited for carrying multiple traffic types of different priorities. An analytical model for the equilibrium state has been developed for the proposed protocol. A comparative evaluation of the protocol is done for three different radio frequency bandwidths currently under consideration for personal communication services (PCS), i.e., 1.25 MHz, 5 MHz, and 10 MHz. Our results demonstrate that the proposed protocol is both robust and flexible for the intended IWAN applications. It offers a significant multiplexing gain as the bandwidth increases     

具有阻力特性材料的σ_f－σ关系及一种新的阻力曲线测定方法

通过对相变增韧陶瓷及一种可切削玻璃－陶瓷动态疲劳（恒应力速率）试验中高应力速率区断裂应力下降现象的理论分析，发现这种现象与材料的阻力特性（Ｒ－ｃｕｒｖｅ）密切相关。确立的σ_ｆ－σ理论关系能够很好地描述整个应力速率区间内的动态疲劳试验结果。高应力速率区σ_ｆ－σ在双对数坐标下为负斜率直线，直线斜率为（ｍ为阻力曲线ＫＲ＝ｋ（△ａ）~ｍ的指数），断裂主要由材料阻力行为控制；低应力速率区，σ_ｆ－σ在双对数坐标下为正斜率直线，直线斜率为　（ｎ为应力腐蚀指数），断裂主要由材料应力腐蚀行为控制。建立了测定材料阻力特性的一种新方法，分别用这种方法及压痕／弯曲方法对一种可切削玻璃－陶瓷的阻力特性进行了实验测定，两种方法所得结果有很好的一致性。