Regularized variational Bayesian learning of echo state networks with delay&sum readout

In this work, a variational Bayesian framework for efficient training of echo state networks (ESNs) with automatic regularization and delay&sum (D&S) readout adaptation is proposed. The algorithm uses a classical batch learning of ESNs. By treating the network echo states as fixed basis functions parameterized with delay parameters, we propose a variational Bayesian ESN training scheme. The variational approach allows for a seamless combination of sparse Bayesian learning ideas and a variational Bayesian space-alternating generalized expectation-maximization (VB-SAGE) algorithm for estimating parameters of superimposed signals. While the former method realizes automatic regularization of ESNs, which also determines which echo states and input signals are relevant for "explaining" the desired signal, the latter method provides a basis for joint estimation of D&S readout parameters. The proposed training algorithm can naturally be extended to ESNs with fixed filter neurons. It also generalizes the recently proposed expectation-maximization-based D&S readout adaptation method. The proposed algorithm was tested on synthetic data prediction tasks as well as on dynamic handwritten character recognition.     

On a computationally efficient approach to boron-interstitial clustering

The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atoms and self-interstitials. A complete implementation into TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce profile shape and dopant activation for a large variety of implant and annealing conditions.     

Two- and three-dimensional optical carrier generation determination in crystalline silicon solar cells

Two- and three-dimensional analyses of the distribution of optically generated charge carriers in textured crystalline silicon solar cells of arbitrary geometry have been performed. The simulation algorithm, developed for that purpose, is based on geometrical optics and ray tracing. It determines the dominant contributions to the optical generation within textured silicon exactly. The contribution of weakly absorbed long-wavelength photons is calculated using a Monte-Carlo simulation. The presented algorithm is fast and accurate and can also be used to calculate reflectance and transmittance spectra in excellent agreement with measurements. Two- and three-dimensional generation profiles in single- and double-sided textured solar cells are presented and discussed in detail. Examples for applications are given. Finally, the presented algorithm is compared with a pure Monte-Carlo algorithm.     

Monte Carlo simulation and measurement of nanoscale n-MOSFETs

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacitance-voltage measurements. Good agreement between the measured output characteristics and the full-band Monte Carlo simulations is found without any fitting of parameters and the on-currents are reproduced within 4%. The analysis of the velocity profiles along the channel confirms that the on-current is determined by the drift velocity in the source side of the channel. Analytic-band Monte Carlo simulations are found to involve an overestimation of the drain current in the nonlinear regime which becomes larger for increasing drain voltage and decreasing gate length. The discrepancy originates from a higher nonlinear drift velocity and a higher overshoot peak in bulk silicon which is due to differences in the band structures above 100 meV. The comparison between analytic-band and full-band Monte Carlo simulation therefore shows that the source-side velocity in the on-state is influenced by nonlinear and quasiballistic transport.     

Specific cleavage of chromosomal and plasmid DNA strands in gram-positive and gram-negative bacteria can be detected with nucleotide resolution

A sensitive and precise in vitro technique for detecting DNA strand discontinuities produced in vivo has been developed. The procedure, a form of runoff DNA synthesis on molecules released from lysed bacterial cells, mapped precisely the position of cleavage of the plasmid pMV158 leading strand origin in Streptococcus pneumoniae and the site of strand scission, nic, at the transfer origins of F and the F-like plasmid R1 in Escherichia coli. When high frequency of recombination strains of E. coli were examined, DNA strand discontinuities at the nic positions of the chromosomally integrated fertility factors were also observed. Detection of DNA strand scission at the nic position of F DNA in the high frequency of recombination strains, as well as in the episomal factors, was dependent on sexual expression from the transmissable element, but was independent of mating. These results imply that not only the transfer origins of extrachromosomal F and F-like fertility factors, but also the origins of stably integrated copies of these plasmids, are subject to an equilibrium of cleavage and ligation in vivo in the absence of DNA transfer.     

Micro RNA-124a Regulates Lipolysis via Adipose Triglyceride Lipase and Comparative Gene Identification 58

Lipolysis is the biochemical pathway responsible for the catabolism of cellular triacylglycerol (TG). Lipolytic TG breakdown is a central metabolic process leading to the generation of free fatty acids (FA) and glycerol, thereby regulating lipid, as well as energy homeostasis. The precise tuning of lipolysis is imperative to prevent lipotoxicity, obesity, diabetes and other related metabolic disorders. Here, we present our finding that miR-124a attenuates RNA and protein expression of the major TG hydrolase, adipose triglyceride lipase (ATGL/PNPLA2) and its co-activator comparative gene identification 58 (CGI-58/ABHD5). Ectopic expression of miR-124a in adipocytes leads to reduced lipolysis and increased cellular TG accumulation. This phenotype, however, can be rescued by overexpression of truncated Atgl lacking its 3''UTR, which harbors the identified miR-124a target site. In addition, we observe a strong negative correlation between miR-124a and Atgl expression in various murine tissues. Moreover, miR-124a regulates the expression of Atgl and Cgi-58 in murine white adipose tissue during fasting as well as the expression of Atgl in murine liver, during fasting and re-feeding. Together, these results point to an instrumental role of miR-124a in the regulation of TG catabolism. Therefore, we suggest that miR-124a may be involved in the regulation of several cellular and organismal metabolic parameters, including lipid storage and plasma FA concentration.     

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

Dopant implantation, followed by spike annealing is one of the main focus areas in the simulation of silicon processing due to its ability to form highly-activated ultra-shallow junctions. Coupled with the growing interest in the use of silicon-on-insulator (SOI) wafers, modelling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formation on one hand, and on electrical MOSFET device characteristics on the other hand, are required.In this work, physically-based models of dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions in both bulk silicon and SOI are integrated within a unique simulation tool to model the different physical mechanisms involved in the process of ultra-shallow junction formation.The application to 65 nm SOI MOSFET devices demonstrated the strong impact of the process simulation models on the simulated electrical device characteristics, in particular for both defect evolution and defect dopant interaction with the additional silicon/buried oxide (Si/BOX) interface. Simulation results of the threshold voltage (V_th) and the variation of the on- and off-state currents of the explored structures are in good agreement with experimental data and can provide important insight for optimizing the process in both bulk silicon and SOI technologies.     

奥地利格拉茨交通枢纽总站

历时两年施工,耗资9000万欧元的奥地利格拉茨交通总站在预算内按时完工。车站前面的区域进行了重新设计,新建了一个凸出于站房的、被当地人称为"黄金眼"的屋顶,成为整个广场的中心。曾经最为现代化的有轨电车现在行驶于地下,有4条线路与车站直接相连。由于当地交通枢纽提供国际运输服务,总站因而每年将接纳大约4万名乘客。"我们重建了车站广场并将有轨电车引入地下,为乘客提供了实用并有吸引力的本     

奥地利因斯布鲁克Leiner家具店及MPreis超市

<正>项目名称:Leiner家具店及MPreis超市业主:Kika-Leiner GmbH建设地点:奥地利因斯布鲁克设计单位:Zechner &Zechner事务所用地面积:6900m建筑面积:1.7万m结构形式:钢筋混凝土结构材料应用:穿孔钢板项目负责人:Martin Zechner建筑专业:Martin Zechner结构专业:ZSZ Ingenieure施工单位:Bodner,Porr设计时间:2010年～2011年建成时间:2012年图纸版权:Zechner&Zechner事务所摄影:Thilo Hrdtlein