A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.     

环境保护地理信息系统的设计

本文主要介绍基于计算机网络的通用型环境保护地理信息系统的功能和实现方法。     

JOINING MECHANISMS OF β''''-Al2O3 CERAMIC AND PYREX GLASS TO Al MATRIX COMPOSITE

The bonding of β'-Al2O3 and pyrex glass to Al matrix composites by anodic bonding process is achieved. The microstructure of the bonded interface and the joining mechanisms are analyzed with scanning electron microscope (SEM), energy dispersive X-ray fluorescence spectrometer (EDX). It is observed that the bonding region across the interface consists of the metal layer, oxide transitional layer and the ceramic layer, with the transitional layer composed of surface region and sub-surface region. The bonding process can mainly be categorized into anodic bonding process and solid state diffusing process. The pile-up of the ions and its drift in the interface area are the main reasons for anode oxidation and joining of the interface. The temperature, voltage and the drift ions in the ceramic or glass during the bonding process are the essential conditions to solid state diffusing and oxide bonding at the interface. The voltages, temperature, pressure as well as the surface state are the main factors that influence the anodic bonding.     

兰州重离子加速器大型真空室

已建成的兰州重离子加速器的真空室是一个大型整体结构的超高真空容器,直径约10m,高4.5m,重65000kg,内表面积211m~2,容积100m~3,工作真空度为5×10~(-5)Pa。采用有限单元法在计算机上用SAP-5C程序对真空室受力分析进行了计算。真空室结构材料选用瑞典Uddeholm钢厂生产的316 L 超低碳不锈钢。承制此大型容器的是航天工业部风华机器厂。由于结构庞大,首先将真空室分成八大块和几小块在工厂制造,然后运至现场焊制成一整体容器并进行机械加工。所有密封焊缝均用着色渗透液,X-射线探伤和氦质谱探漏仪进行检查和探漏。     

The relationship between photo-catalytic performance and optical property over Si-incorporated TiO2

This study focuses on the relationship between photo-catalytic performance and optical property over Si-incorporated TiO₂. The Si-incorporated TiO₂ particles exhibited a pure structure of anatase having a particle size of less than 20 nm and surface area of more than 190 m²/g. The absorbance did not shift to a higher wavelength in spite of the incorporation of the Si ions, but the intensity of the photoluminescence (PL) curve was the smallest in the case of the 2.0 mol% Si-TiO₂, which was related to the recombination between the excited electrons and holes. Based on these results, the photodecomposition of methyl orange in the liquid reaction was enhanced over the 2.0 mol% Si-incorporated TiO₂ compared with that over pure TiO₂: Methyl orange at 10.0 ppm was completely decomposed after 100 min when 1.0 g of the 2.0 mol% Si-incorporated TiO₂ was used.     

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.     

Preparation of multi-compositional gas sensing films by combinatorial solution deposition

Various compositions of gas sensing films were prepared by the combinatorial deposition of SnO₂, ZnO, and WO₃ sol solutions and their gas sensing behaviors were investigated. The film composition could be manipulated conveniently via the alternate dropping of different oxide sol solutions. From the correlation between film compositions and gas sensitivities, the selective detection of C₂H₅OH and CH₃COCH₃ in the presence of CO, C₃H₈, H₂, and NO₂ could be attained. In addition, the discrimination between C₂H₅OH and CH₃COCH₃, which is a challenging issue due to their similar chemical nature, becomes possible. This research demonstrates the precise design of the sensor-material composition for the selective gas detection via the combinatorial approach.     

新的启迪

说点心里的话，建筑设计对青年人来讲是一条漫长的道路。建筑是一个载体，有精神一面，也有物质一面。有些建筑师拿着模型或未建成的设计来炒作，为了求名，生怕别人不知道。这对个人是小事，但若贻误了青年学子，那就是不可取的。     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Reliability and performance analysis of time – space – time switching networks with multiple separated space switches

Since electronic switching systems usually require very strict reliability requirements as well as good performance objectives, we need to jointly analyse the performance and reliability of switching systems. In this paper, we compare conventional time–space–time switches with single space switches with those with multiple separated space switches, from the viewpoints of reliability and performance. We consider time–space–time switching networks which consist of N incoming time switches, i.e. one NxN space switch, two (N/2)x(N/2) space switches, and four (N/4)x(N/4) space switches. We introduce a Markov reliability model to study the effect of failures and analyse the reliability and performance of three different types of switching networks in terms of average blocking probability and the mean time to unreliable operation, as we vary the offered traffic. As a result, T–S–T switching networks with multiple separated space switches exhibit better performance and reliability than those with single space switches.