Interaction of antiparallel transverse domain walls in ferromagnetic nanowires

The interaction of antiparallel transverse domain walls in ferromagnetic nanowires was investigated via micromagnetic simulation with systematic variations of the external field strength as well as the wire thickness. The interaction of antiparallel transverse walls after domain wall collision exhibited damped multiple collisions due to the rigid structure of the antiparallel transverse walls. The detailed process during the multiple collisions was analyzed via the Fast Fourier Transform technique, along with a careful examination of the inner spin structures of the colliding domain walls. It was found that a frequency peak of multiple collisions shifted to a higher peak position as the external field strength increases. With a stronger field strength of around a few hundred mT, it was found that two antiparallel transverse walls were finally annihilated with formation of complex antivortex structures.     

Integrated Ka-band finline mixer/modulator

A new mixer/modulator for millimetre-wave applications is presented. The circuit is implemented with a combination of finlines, coplanar lines and microstrip lines. By applying the described mixer/modulator to millimetre-wave systems a twofold use of active elements such as the Gunn element and Schottky diodes is possible. The size of the whole planar structure is about 4 × 4 cm and there is no need for a variable short.     

迈丹商业综合体

迈丹商业中心本身作为高效的商业综合体项目,还成为了伊斯坦布尔飞速发展区之一的真正核心。它坐落在城市亚洲区的近郊,基地包括宜家家居中心,不久后还将在此开发新的住宅区。通过其几何形体与交通策略,综合体与老城肌理融合,为传统的城外商业地产项目开辟了新的模式。合理组织不同的业态空间,将停车场置     

Cryogenic ultra-low-noise SiGe transistor amplifier

An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.     

Toxoplasma gondii – Seroprävalenz in Mastschweinebeständen Ergebnisse aus einer deutschlandweiten Studie

Ohne Zusammenfassung     

An analysis of GCFR depressurization transients without scram

Four transients imposed on a gas cooled fast breeder reactor (GCFBR or GCFR) plant are analyzed. The transients are variations of a design basis depressurization accident (DBDA) [1], in which a rupture is postulated in the inlet plenum, the reactor is scramed and the circulator output is drastically reduced. Variations considered are, (1) in all cases the reactor is not scrammed; and (2) the rupture size is varied from 0.6 ft² to zero. In the limit of zero (no rupture) the transient imposed on the system is due to the behavior of the circulator and steam generator during a DBDA.