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排序方式: 共有1133条查询结果,搜索用时 593 毫秒
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Abraham G. Alvarado Rosaura Hernández-Montelongo Martin Rabelero Lourdes A. Pérez-Carrillo Jorge E. Puig Francisco López-Serrano 《Polymer Engineering and Science》2020,60(2):223-232
A simple but comprehensive model considering homogeneous and micellar nucleation, coagulation, entry of radicals to particles and to micelles and radicals' exit from particles, is presented. The model is validated, in a starved semicontinuous heterophase polymerization of ethyl methacrylate, at three monomer addition rates. The model accurately describes the overall and instantaneous conversion, the average particle density and diameter, and the number and weight average molar masses evolutions over time. It is found that even though the average number of radicals is much smaller than 0.5, the system is not 0-1. An empirical function was used to describe the gel effect. The homogeneous nucleation was the prevailing mechanism for particle formation and large exit rates of radicals were observed. POLYM. ENG. SCI., 60: 223–232, 2019. © 2019 Society of Plastics Engineers 相似文献
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Juana Maria de Lourdes Medina-Contreras Patrick Mailloux-Salinas Juventino III Colado-Velazquez Norma Leticia Gomez Viquez Gómez-Viquez Rodrigo Velázquez-Espejel Ana del Carmen Susunaga-Notario David Julian Arias-Chávez Guadalupe Bravo 《Journal of the science of food and agriculture》2020,100(7):3212-3219
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Meza-Espinoza Libier de los Ángeles Vivar-Vera María de Lourdes García-Magaña María Sáyago-Ayerdi Sonia G. Chacón-López Alejandra Becerrea-Verdín Eduardo M. Montalvo-González Efigenia 《Food science and biotechnology》2018,27(2):509-517
Food Science and Biotechnology - The enzymatic activity and partial characterization of proteases from Bromelia karatas fruits were evaluated and compared with Bromelia pinguin proteases. The... 相似文献
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Francisco Hernndez-Beltrn Juan Carlos Moreno-Mayorga María de Lourdes Guzmn-Castillo Juan Navarrete-Bolaos Montserrat Gonzlez-Gonzlez Brent E. Handy 《Applied Catalysis A: General》2003,240(1-2):41-51
The evolution of the properties of a REUSY zeolite contained in a fluid cracking catalyst was investigated under laboratory steam deactivation procedures and in age fractions of the corresponding equilibrium catalyst (Ecat). The aging pattern, defined by the evolution of the zeolite surface area (ZSA) related to the decrease of the unit cell size (UCS), was similar between lab-steamed zeolites and Ecat fractions. A sharp drop in ZSA occurred at ca. 2.430 nm UCS. A study done by FT-IR spectroscopy suggested that zeolite dealumination initially took place more extensively on the sodalite cages and double six-member rings (D6R) of the structure and that the final collapse of the zeolite framework occurred through destruction of the 12-member rings (12M). This can be explained by a crystal fracture and break down process and disassembling of the sodalite cages in the faujasite structure. NH3 microcalorimetry showed that strong acid sites in faujasites are destroyed by steam aging, but this effect does not lead to a reduction in the cracking activity of the Ecat form. The microactivity test (MAT) showed that the specific activity declined sharply at 2.430 nm UCS. Differences in product selectivity were related to the extent of damage of the zeolite, extra-framework alumina and mesoporosity. While further aging canceled the effect attributed to extra-framework alumina differences attributed to mesoporosity increased. 相似文献
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O'Keefe M.F. Atherton J.S. Bosch W. Burgess P. Cameron N.I. Snowden C.M. 《Semiconductor Manufacturing, IEEE Transactions on》2003,16(3):376-383
The establishment of a 150-mm (6-in) gallium arsenide (GaAs) facility is described together with the development of very high yielding and cost-effective semiconductor device technologies and a manufacturing capacity of over 40000 wafers/annum. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The paper describes recent process development by the utilization of a data-driven yield management system to support the delivery of high-quality RF products to customers. Finally, "end of line" DC and RF testing of finished 150-mm GaAs pHEMT foundry wafers is described, enabling scalar measurements of power, noise, and intermodulation products as well as vector measurements of S-parameters and noise parameters at frequencies of up to 40 GHz. 相似文献
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Cara L Booker Jennifer B Unger Stanley P Azen Lourdes Baezconde-Garbanati Brian Lickel C Anderson Johnson 《Nicotine & tobacco research》2007,9(11):1085-1094
The associations between stressful life events and smoking have been established among adolescents in the United States. However, whether these relationships are similar in adolescents from other non-Western cultures is unknown. Understanding these relationships in adolescents may help to provide opportunities to reduce the smoking rates in those cultures by providing positive coping methods that do not include smoking. In this longitudinal study, the associations between nine stressful life events scales and smoking behaviors were examined in a sample of Chinese adolescents. Six of these scales, positive school-related, negative school-related, positive family-related, positive peer-related, negative peer-related, and negative health-related had significantly different means among females and males. Among males, positive school-related stress was a protective factor for smoking susceptibility. Among females, positive school-related stress was a protective factor and negative school-related stress was a risk factor for lifetime smoking, and negative family-related stress was a risk factor for smoking susceptibility. Findings indicate that smoking among male adolescents in China may not be the result of stress; however, in females stress may contribute to the decision to smoke. Future directions are discussed. 相似文献
9.
Bellens R. de Schrijver E. Van den Bosch G. Groeseneken G. Heremans P. Maes H.E. 《Electron Devices, IEEE Transactions on》1994,41(3):413-419
A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress Dit-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior 相似文献
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