Performance of surface ionic conduction single chamber fuel cell prepared by the sol gel method

The performance of surface ionic conduction single chamber fuel cell (SIC‐SCFC) prepared by the sol gel method was studied on electric characteristics due to the differences of the operating temperature and humidity, the electrode distance and electrolyte film depth, and multiple cells with the series and parallel connections. The SIC–SCFC was arranged the both anode of Pt and cathode of Au on the boehmite electrolyte. The open circuit voltage (OCV) of single cell achieved a maximum of 530mV in the dry gas mixtures of O₂/H₂=50% in room temperature operation, and but it became decrease as over 60%. The OCV was maintained the constant value between operating temperatures of 30°C to 80°C, and but it was decreased sharply at over 90°C because a humidity on the cell became lower as increasing operating temperature. Then, the cell property was improved to 120°C by adding to the humidity of 70% using a humidifier. The electrode distance and the electrolyte film depth of SIC‐SCFC found to be contributed to the reductions of the cell resistance and the surface roughness on the electrode, respectively. Moreover, the power property of SIC‐SCFC was significantly improved by cell stacks comprised of the series or parallel connection of a cell.     

1-GHz-spaced 16-channel arrayed-waveguide grating for a wavelength reference standard in DWDM network systems

We fabricated a 1-GHz-spaced 16-channel arrayed-waveguide grating (AWG) by using a new AWG configuration where the path of each arrayed waveguide winds backward and forward across a 4-in diameter wafer without crossing any other waveguides. The ultra-narrow (< 1 GHz) and stable transmission bands of this AWG can be used to construct a wavelength reference standard covering the S, C, and L bands in the dense wavelength-division-multiplexing network systems whose frequency deviation is /spl plusmn/160 MHz.     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

Interfacial strength and chemistry of additive-free silicon nitride ceramics brazed with aluminium

Two kinds of additive-free silicon nitride ceramics were brazed with aluminium; one was with as-ground faying surfaces and the other was with faying surfaces heat-treated at 1073K for 1.8 ksec in air. The heat-treatment of the silicon nitride ceramics formed a silicon oxynitride layer on the faying surfaces and increased the brazing strength of the joints. A silica-alumina non-crystalline layer and a β′-sialon layer were formed successively from the aluminium side at the interface of the joints. The heat-treatment which made the former layer thicker is a necessary process in making reliable, strong brazed joints.