Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

测定钠中杂质的手动阻塞计的研究

文章介绍了测定钠中杂质浓度的手动阻塞计的原理、装置和实验结果。为了减少测量误差,我们研究了影响准确测定阻塞温度的因素,并且找到了减少测量误差的办法。在同样的杂质饱和温度下,该阻塞计测得的高、低阻塞温度所对应的杂质浓度差是很接近的。对氧其差值为1.03ppm;对氢为0.0763ppm。     

气缸可靠性试验装置的研制

为了进行气缸可靠性试验研究,针对缸径为50mm、行程为160mm的气缸研制了一套气缸可靠性试验装置.5个月的不间断试验测试及获得的大量数据表明,该装置运行稳定可靠,满足了气缸可靠性试验的要求.详细介绍了装置试验回路的构成、工作原理和具体实现,测控子系统的硬件构成和软件流程,气缸性能参数测量方法及获得的部分数据.     

应用事故树法对深水井控进行风险评估

深水井喷事故危害极大，严重时可导致井眼报废、船毁人亡等恶性后果，预防和控制深水井喷是国内外石油界的一个技术难题。文中利用风险树分析引发深水钻井工程事故的顶事件，重点讨论各底事件的相互联系及对系统的影响程度，分析顶事件的发生概率，为最大程度地减少深水井控事故的发生提供理论依据。通过对深水钻井过程中存在的风险进行分析，构建了深水井控风险分析事故树，并对其进行了定性与定量分析。通过风险分析，认为深水井控最主要的影响因素是关井及压井时设备故障、设计方法及操作失误的影响超过安全极限。分析表明，降低基本事件的发生概率对预防井喷作用明显，基本事件发生概率提高1倍，井喷发生概率提高近10倍。针对深水井控过程中存在的风险因素，从工艺、装备及人员要求方面提出了预防深水井喷的措施。     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

N,N''-取代邻苯二胺的合成

通过2-取代苯并咪唑盐的还原开环反应制备了8个N,N′-不同取代的邻苯二胺,并经1HNMR、IR、MS及元素分析表征,其中5个未见文献报道.这是一条由邻苯二胺和羧酸经2.取代苯并咪唑制取该类化合物的简洁合成路线.     

Onset of buoyancy-driven convection in melting from below

When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.