应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

DCS分布式冷却系统在通信基站的应用研究

针对基站柜式空调耗电量大的问题,创造性地使用基站分布式冷却的方式,达到精确送风,节能高效的目的.在应用实践中检验了分布式冷却系统实际节能量和应用效果,总结出分布式冷却系统应用场景和范围,为更大范围推广应用DCS分布式冷却系统提供实践依据.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

Rectangular Section Control Technology for Silicon Steel Rolling

Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed.     

仙游抽水蓄能电站尾水系统充排水试验

为检查工程质量,查找输水系统可能存在的问题并消除隐患,保障电站安全运行,福建仙游抽水蓄能电站在投产发电前,要对输水发电系统进行充水试验与放空排水试验,在试验过程中监测输水系统的应力、应变与渗漏水情况。本文以尾水系统为例,介绍了试验所应具备的工程条件、工作程序及技术要求、试验成果分析和存在问题处理等。试验表明,仙游抽水蓄能电站尾水系统设计合理,施工质量优良,结构可靠,可供同类工程参考与借鉴。     

不同晶相结构ZrO2负载铜基催化剂用于二乙醇胺脱氢反应

通过制备不同晶相结构〔单斜相(m-ZrO_2)、四方相(t-ZrO_2)和无定型(a-ZrO_2)〕ZrO_2载体,再通过沉积沉淀法制得Cu/m-ZrO_2、Cu/t-ZrO_2和Cu/a-ZrO_2催化剂,分别用于催化二乙醇胺脱氢合成亚氨基二乙酸反应。采用XRD、氮气物理吸附脱附、XPS、H_2-TPR、CO_2-TPD对催化剂的结构进行了表征。结果表明,Cu/m-ZrO_2催化剂界面更加有利于Cu~+/Cu~0稳定存在,具有更多的碱性位点,且抗氧化性较好。在二乙醇胺脱氢反应中,Cu/m-ZrO_2催化剂性能最好,反应时间为2.5 h,亚氨基二乙酸收率为97.64%。     

NH_3-OH体系中共沉淀法同时回收钕铁硼废料中Nd-Pr-Co-Fe

为了避免回收单一钕铁硼废料中有价元素带来的操作复杂和资源浪费等问题,本研究采用共沉淀法共沉淀出钕铁硼废料中的有价元素Me(Nd,Pr,Co,Fe),制备可用于生产再生钕铁硼的原料;根据质量守恒和同时平衡原理,采用MATLAB软件建立Me(Nd,Pr,Co,Fe)-OH--NH3热力学模型,绘制lg[Me]-p H曲线模拟共沉淀工艺,并根据模拟结果确立了共沉淀工艺;模拟和实验的结果表明:根据lg[Me]-p H模拟结果可以确立一步共沉淀法的p H:6~10,Fe3+比Fe2+更易于沉淀完全;在上述条件下获得的共沉淀粉末主相均为Nd,Pr,Co,Fe的化合物,且有价元素的百分比含量均大于99.4%;其中,当p H值在8左右时回收率最高,在该条件下金属元素Me(Nd,Pr,Co,Fe)的沉淀效率分别为:98.7%,99.9%,93.6%,99.9%。该结果也表明共沉淀法工艺不仅高效,而且所制备的共沉淀粉末可以满足制备二次钕铁硼的需要。     

Preparation of Silver Nanowires via a Rapid,Scalable and Green Pathway

Rapid synthesis of silver nanowires(Ag NWs) with high quality and a broad processing window is challenging because of the low selectivity of the formation of multiply twinned particles at the nucleation stage for subsequent Ag NWs growth.Herein we report a systematic study of the water-involved heterogeneous nucleation of Ag NWs with high rate(less than 20 min) in a simple and scalable preparation method.Using glycerol as a reducing agent and a solvent with a high boiling point,the reaction is rapidly heated to 210 ℃ in air to synthesize Ag NWs with a very high yield in gram level.It is noted that the addition of a small dose of water plays a key role for obtaining highly pure Ag NWs in high yield,and the optimal water/glycerol ratio is0.25%.After investigating a series of forming factors including reaction temperature and dose of catalysts,the formation kinetics and mechanism of the Ag NWs are proposed.Compared to other preparation methods,our strategy is simple and reproducible.These Ag NWs show a strong Raman enhancement effect for organic molecules on their surface.