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The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon. 相似文献
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采用一种新型的刻蚀气体——HBr+He作为反应离子刻蚀气体,用SiO2作为刻硅槽的掩膜,在8~13Ω·cmP型(100)硅片上,刻出槽宽1.2μm,槽深0.8μm的硅深槽,并对HBr反应离子刻蚀硅的高度各向异性以及刻蚀过程中产生的“宽度”效应和“黑硅”现象进行了分析. 相似文献
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本文论述了发展 I~2L 多值逻辑电路的意义;分析了 I~2L 多值逻辑电路的基本单元:I~2L 阈值检测器,折叠收集极 I~2L 单元;介绍了 I~2L 多值逻辑电路的基本函数及其电路:补函数,后继函数,文字函数,最大函数,最小函数;并对 I~2L 四值逻辑电路作了较详细的介绍:四值全加器、四值多路调制器、四值数字转换器、四值乘法器、四值 ROM 等。 相似文献
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