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We used the time-resolved equipment consisting of a streak camera and normal photoluminescence set-up to measure the transcient behavior of the PL from the InGaAs/GaAs single quantum well sample, and thus obtained both the temporal resolution and the spectral resolution of the photoluminescence. A rapid decay of PL signal from the GaAs layer and the slow PL decay from the InGaAs well have beed found. From the experimetal results, the trapping efficiency of the carriers by the well is estimated to be about 80%. 相似文献
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当激发光子能量大于多量子阱中势垒层的能带隙时,自由载流子同时可以在势垒层以及势阱层产生,对这些载流子的弛豫过程的研究不论对其基本的物理过程的认识,还是对新的光电子器件的研制和应用都有着重要的意义。 本文首先采用飞秒(10~(-15)秒)饱和吸收光谱技术研究了Al_(0.3)Ga_(0.7)As(100?)/GaAs(60?)11层量子阱样品受激载流子的初始弛豫过程。飞秒激光脉冲是由对碰脉冲锁模环形染料激光器(CPM)产生的,脉冲的时间宽度为 58fs,脉冲的重复频率为 相似文献