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介绍了在纳米晶浮栅存储器数据保持特性方面的研究工作,重点介绍了纳米晶材料的选择与制备和遂穿介质层工程。研究证明,金属纳米晶浮栅存储器比半导体纳米晶浮栅存储器具有更好的电荷保持特性。并且金属纳米晶制备方法简单,通过电子束蒸发热退火的方法就能够得到质量较好的金属纳米晶,密度约4×1011cm-2,纳米晶尺寸约6~7nm。实验证明,高介电常数隧穿介质能够明显改善浮栅存储器的电荷保持特性,所以在引入金属纳米晶和高介电常数遂穿介质之后,纳米晶浮栅存储器可能成为下一代非挥发性存储器的候选者。 相似文献
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金离子注入二氧化锆薄膜的单极电阻转变特性研究 总被引:1,自引:1,他引:0
The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+ -implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions. 相似文献
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传统的备件库存管理是以订货量和备件资金管理为中心。用某新建轧钢厂以技术攻关为中心的工艺备件管理实例,来探讨如何有效降低新建轧钢厂工艺备件库存,优化轧钢厂工艺备件库存管理。 相似文献
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