一种采用多个渐变反型电荷层优化电场的LDMOST

A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.     

人机结合改善标准单元芯片设计

介绍了一种专用译码电路的芯片设计。该电路采用正向设计方法，共设计主要表现为两个方面；逻辑电路设计和版图设计。简单介绍了电路的逻辑设计；详细描述了采用人机结合的方式，在自动布局布线系统设计的基础上进行人工干预的版图设计方法。     

9×64位译码器专用集成电路的芯片设计

介绍了一专用集成电路ＣＳＣ７１０７０译码器电路的芯片设计。这套电路分为两个芯片。采用３μｍ硅栅ＣＭＯＳ标准单元设计系统进行设计。利用ＷＯＲＫＶＩＥＷ软件在微机上进行逻辑输入，转换成网表文件在ＰＲＩＭＥ上设计版图。版图设计采取全人工布局，自动通道布线方式。该电路采用逻辑模拟和设计验证两种方式检验设计的正确性。