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Intrinsic stability of the heterojunction bipolar transistor(HBT) was analyzed and discussed based on a small signal equivalent circuit model.The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT.The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined.The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved.The theoretic analysis resul... 相似文献
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大中型水利工程施工牵涉的专业多、规模大、工序复杂,其施工组织设计对保证工程质量、缩短建设周期、降低工程造价、提高工程效益等都有十分重要的作用。文章结合一工程实例,阐述了流水作业法的基本原则、组织原则和一般步骤,供技术人员参考。 相似文献
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A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of -122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz. 相似文献
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A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of-122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz. 相似文献
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具有在片稳定网络的GaAs HBT微波功率管 总被引:1,自引:0,他引:1
采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器. 相似文献
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研制了X波段的InGaP/GaAs HBT单级MMIC功率放大器,该电路采用自行开发的GaAs HBT自对准工艺技术制作.电路偏置于AB类,小信号S参数测试在8~8.5GHz范围内,线性增益为8~9dB,输入驻波比小于2,输出驻波比小于3,优化集电极偏置后,线性增益为9~10dB.在8.5GHz进行连续波功率测试,在优化的负载阻抗条件下,P1dB输出功率为29.4dBm,相应增益7.2dB,相应PAE〉40%,电路的饱和输出功率Psat为30dBm. 相似文献
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