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1.
Fukano H Tamotsu Z Eiji S Kimitsuna W Teruyuki N 《Journal of Bioscience and Bioengineering》2002,93(1):20-24
Qbeta replicase functioning in Escherichia coli is an RNA-dependent RNA polymerase composed of one phage-coded subunit and three host-coded proteins: ribosomal protein S1, and protein elongation factors EF-Tu and EF-Ts. Qbeta replicase lacking ribosomal protein S1 (alpha-less replicase) is capable of replicating some small RNAs. We attempted to create functional alpha-less replicase by co-expression of the mRNAs that code for the subunits of alpha-less replicase in a rabbit reticulocyte cell-free translation system. Replicase activity, however, could not be detected when both EF-Tu and EF-Ts were co-expressed with the phage-coded subunit. On the other hand, active alpha-less replicase was obtained when an EF-Ts-EF-Tu fusion protein was co-expressed with the phage-coded subunit. Consequently, we succeeded in generating genetically engineered active alpha-less Qbeta replicase which functions in a eukaryotic cell-free system. 相似文献
2.
InAlAs/InGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.<> 相似文献
3.
The response of the structure subjected to nonstationary random vibration such as earthquake excitation is nonstationary random vibration. Calculating method for statistical characteristics of such a response is complicated. Mean square value of the response is usually used to evaluate random response. Integral of mean square value of the response corresponds to total energy of the response. In this paper, a simplified calculation method to obtain integral of mean square value of the response is proposed. As input excitation, nonstationary white noise and nonstationary filtered white noise are used. Integrals of mean square value of the response are calculated for various values of parameters. It is found that the proposed method gives exact value of integral of mean square value of the response. 相似文献
4.
Improved heat and solvent resistance of a pressure‐sensitive adhesive thermally processable by isocyanate dimer dissociation 下载免费PDF全文
Methods that do not involve use of an organic solvent are being considered for manufacturing environmental‐friendly pressure‐sensitive adhesive tapes. Among these methods, the hot‐melt method exhibits high productivity but is somewhat limited in terms of performance. Hot‐melt‐fabricated pressure‐sensitive adhesives require heating fluidization and cooling solidification, and it is extremely difficult to improve their heat resistance. We examine thermally processable pressure‐sensitive adhesives with a completely new structure, fabricated based on the thermal dissociation of the isocyanate dimer. This enables thermal processing of materials softened by thermal dissociation. Fabrication of crosslinkable pressure‐sensitive adhesive becomes possible through a reaction of isocyanate caused by dissociation of its dimer. It is found that improving thermal and solvent resistances, which are disadvantages associated with conventional hot‐melt pressure‐sensitive adhesives, is potentially possible with the pressure‐sensitive adhesive reported here. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41444. 相似文献
5.
Takahiro Mise Shin Tajima Tatsuo Fukano Kazuo Higuchi Tsukasa Washio Kazuo Jimbo Hironori Katagiri 《Progress in Photovoltaics: Research and Applications》2016,24(7):1009-1015
We have investigated the influence of sodium (Na) on the properties of co‐evaporated Cu2ZnSnS4 (CZTS) layer microstructures and solar cells. The photovoltaic performance and diode properties were improved by incorporating Na from NaF layers into the CZTS layers, while Na had a negligible effect on the microstructural properties of the layer. The best cell fabricated by using an optimal CZTS layer (Cu/(Zn + Sn) = 0.70, Zn/Sn = 1.8) yielded an active area efficiency of 5.23%. The analysis of device properties suggests that charge‐carrier recombination at CZTS/CdS interface is suppressed by intentional Na incorporation from NaF layers. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
6.
Mitomi O. Kasaya K. Tohmori Y. Suzaki Y. Fukano H. Sakai Y. Okamoto M. Matsumoto S. 《Lightwave Technology, Journal of》1996,14(7):1714-1720
Structures of spot size converters that allow low loss and easy coupling between an optical semiconductor device and a fiber are proposed and designed theoretically. These spot-size converters have a tapered small core for expanding the mode field. They also have a double cladding region which consists of an n+-doped InP substrate as the outer cladding and a p-doped or nondoped InP layer as the inner cladding with a ridge structure. This double cladding utilizes the plasma effect of a carrier which makes the refractive index of highly doped n-InP lower than that of p-doped or nondoped InP. The double-cladding structure can tightly confine an expanded mode field in the inner cladding, and results in low radiation loss at the tapered waveguide, in addition, this structure reforms the mode field shape into a Gaussian-like shape and achieves a low loss coupling of less than 1 dB with a large misalignment tolerance for fiber coupling. These spot-size converters are easily fabricated and applicable to all types of optical semiconductor devices 相似文献
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8.
Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO2:F films were grown on glass substrates at relatively low temperatures of 325–340°C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8×10−4 Ω cm and a high Hall mobility of 28 cm2/V s. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films’ transmittance and resistivity show little change after a 450°C 60 min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO2:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures. 相似文献
9.
M. Tamura T. Yamanaka H. Fukano Y. Akage Y. Kondo T. Saitoh 《Photonics Technology Letters, IEEE》2004,16(12):2613-2615
InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated. 相似文献
10.
Nakajima H. Yamanaka T. Fukano H. Tamura M. Akage Y. 《Lightwave Technology, Journal of》2008,26(5):505-511
A microwave reflection control technique that improves the performance of electroabsorption modulators (EAMs) is presented. The technique exploits the superposition of incident and reflected electrical signals as a modulation signal to enhance the modulation signal voltage applied to EAMs and therefore differs from conventional impedance matching techniques in terms of operating principle. A nearly flat electrical-to-optical frequency response up to 50 GHz and significant improvement in eye openings at 40 Gbit/s have been achieved with the technique. The effects of the technique are demonstrated through both experimental and computational investigations. 相似文献