Low-frequency noise in modern bipolar transistors: impact ofintrinsic transistor and parasitic series resistances

In modern submicrometer transistors, the influence of the internal base and emitter series resistances, on both the I-V characteristics and the LF noise at higher bias currents, becomes important. In this paper expressions are presented for the LF noise in transistors, where the influence of the series resistances has been taken into account. The expressions have been compared with recent experimental results from the literature obtained from modern submicrometer (heterojunction) bipolar transistors. At low forward currents the LF noise in such transistors is determined by spontaneous fluctuations in the base and collector currents. In most transistors at higher forward currents, the parasitic series resistances and their noise become important     

Coordination‐Assisted Bioorthogonal Chemistry: Orthogonal Tetrazine Ligation with Vinylboronic Acid and a Strained Alkene

Bioorthogonal chemistry can be used for the selective modification of biomolecules without interfering with any other functionality that might be present. Recent developments in the field include orthogonal bioorthogonal reactions to modify multiple biomolecules simultaneously. During our research, we observed that the reaction rates for the bioorthogonal inverse‐electron‐demand Diels–Alder (iEDDA) reactions between nonstrained vinylboronic acids (VBAs) and dipyridyl‐s‐tetrazines were exceptionally higher than those between VBAs and tetrazines bearing a methyl or phenyl substituent. As VBAs are mild Lewis acids, we hypothesised that coordination of the pyridyl nitrogen atom to the boronic acid promoted tetrazine ligation. Herein, we explore the molecular basis and scope of VBA–tetrazine ligation in more detail and benefit from its unique reactivity in the simultaneous orthogonal tetrazine labelling of two proteins modified with VBA and norbornene, a widely used strained alkene. We further show that the two orthogonal iEDDA reactions can be performed in living cells by labelling the proteasome by using a nonselective probe equipped with a VBA and a subunit‐selective VBA bearing a norbornene moiety.     

On low-frequency noise in tunnel diodes

A model describing the low-frequency current noise in metal-insulator-metal diodes is presented. It is assumed that the transmission coefficient is modulated by the Nyquist noise of the insulator. This coefficient in turn modulates the current. The frequency dependence of the noise is calculated to be $\text{?}{}^{\mathrm{?\alpha }}$, where α depends on the impedance of the insulator and can have the values 0 or 1 or 2. The model is compared with experimental results, and the agreement is found to be satisfactory.     

On 1/f trapping noise in MOSTs

New calculations are given for the 1/f noise in metal-oxide-semiconductor transistors (MOSTs) based on the McWhorter model (number fluctuations). Particular attention is paid to two regions of the drain current-voltage characteristic: weak inversion and near saturation. The results are at variance with previous theories, where some errors have been made. The gravest error was the violation of the physical law whereby the variance of the number of carriers N in the channel is ⩽N. The calculations do not give a divergent noise power at current saturation, as found by other authors. In the ohmic region, the relation between the spectral density of the drain current fluctuations and the number of carriers is determined. The Langevin method and the Klaassen-Prins method for calculating the 1/f noise in MOSTs are discussed and shown to have been used incorrectly when the mobility and the Hooge 1/f noise parameter depend on position in the channel     

1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolartransistors:iImpact of intrinsic transistor and parasitic seriesresistances

1/f noise experiments were performed for n-p-n GaAs/AlGaAs HBTs as a function of forward bias at room temperature. The experimental data are discussed with the help of new expressions for the 1/f noise in bipolar transistors where the influence of internal parasitic series resistances has been taken into account. At low forward currents the 1/f noise is determined by spontaneous fluctuations in the base and collector currents. At fixed bias, the collector current noise exceeds the base current noise. At higher forward currents the parasitic series resistances and their 1/f noise become important. Experimental results from the literature are compared with the results     

Low-frequency noise in polysilicon emitter bipolar transistors

The low-frequency noise in polysilicon emitter bipolar transistors is investigated. Transistors with various geometries and various properties of the oxide layer at the monosilicon polysilicon interface are studied. The main 1/f noise source proved to be located in the oxide layer. This source causes both 1/f noise in the base current S_Ib and 1/f noise in the emitter series resistance S_re The magnitude of the 1/f noise source depends on the properties of the oxide layer. The 1/f noise is ascribed to barrier height fluctuations of the oxide layer resulting in transparency fluctuations for both minority and majority carriers in the emitter, giving rise to S_Ib and S _re respectively. It is also shown that a low transparency of the oxide layer also reduces the contribution of mobility fluctuations to S_Ib     

Low-frequency noise in Schottky barrier diodes

The low-frequency excess noise in Schottky barrier diodes has been investigated. In the ideal case where the saturation current is completely determined by thermionic emission of electrons, no 1/? noise will be produced in the barrier. The presence of trap states in the depletion region can lead to generation-recombination noise. At sufficient high forward currents 1/? noise can be generated in the series resistance of the Schottky diode. Deviations from the ideal diode, for example as a result of edge effects, produce 1/? noise and increase at the same time the ideality factor. It is empirically found that the 1/? noise level decreases very rapidly if the ideality factor tends to unity.