Amorphous-crystalline silicon junctions

High barriers are observed in amorphous-p-type-silicon junctions, resulting in good rectification. No significant barriers are detected in amorphous-n-type-Si junctions. A simple model is also presented to describe the junction.     

Simple model for charge-coupled devices

A theory for charge-coupled devices has been developed, based on the transient nature of charge flow in these devices. It has been shown that the limiting factor in charge-transport processes is that of diffusion, which gives a typical time of 10?8 s for 90% of charge transfer.     

Effect of field-dependent mobility on m.o.s. transistor characteristics

The authors calculate the characteristics of m.o.s.t.s, taking full account of the surface electric-field dependence of mobility in the channel, which is very significant for thin-oxide or high-gate-voltage devices. An approximation is used for the average effect of background ionised impurity charge. Fields along the channel are assumed to have a negligible influence on mobility.