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1.
V. V. Mamutin O. V. Bondarenko A. P. Vasil’ev A. G. Gladyshev A. Yu. Egorov N. V. Kryzhanovskaya V. S. Mikhrin V. M. Ustinov 《Technical Physics Letters》2007,33(5):384-387
The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications. 相似文献
2.
O. K. Teodorovich L. N. Yagupol'skaya R. I. Kryzhanovskaya E. S. Lugovskaya 《Powder Metallurgy and Metal Ceramics》1980,19(10):694-696
Conclusions Pseudoalloys based on tungsten and copper (silver) possess good resistance to corrosion by dry elegas, and may be recommended for the manufacture of electrical parts intended for operation in hermetic systems filled with elegas. In humid elegas pseudoalloys based on tungsten and copper (silver) become covered with films forming by the reactions of the surfaces of these materials with water and the hydrolysis products of impurities in elegas.Translated from Poroshkovaya Metallurgiya, No. 10(214), pp. 40–43, October, 1980. 相似文献
3.
Gordeev N.Yu. Tan W.K. Bryce A.C. Novikov I.I. Kryzhanovskaya N.V. Kuznetsov S.M. Gladyshev A.G. Maximov M.V. Mikhrin S.S. Marsh J.H. 《Electronics letters》2007,43(1):29-30
InAs/GaAs quantum dot lasers incorporating passive waveguide created by post-growth intermixing processing have been studied. Emission wavelength of the passive section shows relative blueshift as high as 135 nm with respect to the emission wavelength of the active section. Intrinsic losses in the section formed by the intermixing are very small. Broad-area lasers with 100 mum stripe width incorporating intermixed section have demonstrated improvements in far-field pattern under both pulsed and continuous wave pumping current 相似文献
4.
The results of calculations of the band gap in GaP
x
N
y
As1 − x − y
alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are
reported. The optical properties of quantum-confined heterostructures based on GaP
x
N
y
As1 − x − y
alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range
of 15–300 K. The heterostructures consist of GaP0.814N0.006As0.18 quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different
numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed
in the spectral range 620–650 nm. The photoluminescence spectra of the GaP0.814N0.006As0.18/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established
that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence
properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic
devices on the basis of GaP
x
N
y
As1 − x − y
alloys. 相似文献
5.
L. Ya. Karachinsky T. Kettler N. Yu. Gordeev I. I. Novikov M. V. Maximov Yu. M. Shernyakov N. V. Kryzhanovskaya A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov N. N. Ledentsov A. R. Kovsh V. A. Shchukin S. S. Mikhrin A. Lochmann O. Schulz L. Reissmann D. Bimberg 《Semiconductors》2005,39(12):1415-1419
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels. 相似文献
6.
Ledentsov N.N. Kovsh A.R. Zhukov A.E. Maleev N.A. Mikhrin S.S. Vasil'ev A.P. Semenova E.S. Maximov M.V. Shernyakov Yu.M. Kryzhanovskaya N.V. Ustinov V.M. Bimberg D. 《Electronics letters》2003,39(15):1126-1128
Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (/spl eta//sub i/>60%) and low internal losses (/spl alpha/<3-4 cm/sup -1/) are realised. The transparency current density per single QD layer is estimated as /spl sim/70 A/cm/sup 2/ and the characteristic temperature is 60 K (20-85/spl deg/C). The emission wavelength exceeds 1.51 /spl mu/m at temperatures above 60/spl deg/C. 相似文献
7.
Asryan L. V. Zubov F. I. BalezinaPolubavkina Yu. S. Moiseev E. I. Muretova M. E. Kryzhanovskaya N. V. Maximov M. V. Zhukov A. E. 《Semiconductors》2018,52(12):1621-1629
Semiconductors - A self-consistent model for calculating the threshold and high-power characteristics of semiconductor quantum well lasers with asymmetric barrier layers is developed. The model,... 相似文献
8.
Basalaeva L. S. Nastaushev Yu. V. Dultsev F. N. Kryzhanovskaya N. V. Moiseev E. I. 《Semiconductors》2019,53(2):205-209
Semiconductors - Abstract—The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are... 相似文献
9.
Moiseev E. I. Maximov M. V. Kryzhanovskaya N. V. Simchuk O. I. Kulagina M. M. Kadinskaya S. A. Guina M. Zhukov A. E. 《Semiconductors》2020,54(2):263-267
Semiconductors - The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with... 相似文献
10.
Zhukov A. E. Kryzhanovskaya N.V. Moiseev E. I. Nadtochiy A. M. Maximov M. V. Dragunova A. S. 《Semiconductors》2021,55(2):250-255
Semiconductors - Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the... 相似文献