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Semiconductors - On the basis of the Monte Carlo algorithm, a method for calculating the energy spectrum of hot nonequilibrium electrons and holes in the track of a primary recoil atom after being... 相似文献
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Semiconductors - The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes... 相似文献
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Semiconductors - The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of... 相似文献
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Zabavichev I. Yu. Potehin A. A. Puzanov A. S. Obolenskiy S. V. Kozlov V. A. 《Semiconductors》2019,53(9):1249-1254
Semiconductors - The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume... 相似文献
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I. Yu. Zabavichev A. A. Potekhin A. S. Puzanov S. V. Obolenskiy V. A. Kozlov 《Semiconductors》2017,51(11):1466-1471
Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained. 相似文献
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Z. F. Krasilnik K. E. Kudryavtsev A. N. Kachemtsev D. N. Lobanov A. V. Novikov S. V. Obolenskiy D. V. Shengurov 《Semiconductors》2011,45(2):225-229
The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk
Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which
is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers
impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities
of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to
radiation. 相似文献
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A. V. Novikov A. N. Yablonskiy V. V. Platonov S. V. Obolenskiy D. N. Lobanov Z. F. Krasilnik 《Semiconductors》2010,44(3):329-334
This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures
with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures
is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge
carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation
defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation
stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands,
in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three-
and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring
layers containing the islands. 相似文献
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