裸眼井中扩张式封隔器力学行为研究

封隔器在石油天然气开采中起着非常重要的作用,而扩张式封隔器在裸眼井中广泛应用。本文采用有限元软件建立了裸眼封隔器与地层的模型,对胶筒在坐封过程中与井壁接触应力的变化进行了研究,并研究了在不同摩擦系数下接触压力的变化,结果表明,建立粗糙井壁面能够更加符合实际情况,胶筒肩部为应力集中的区域,地层与胶筒的接触应力会随着摩擦系数的增加而减小。研究结果为裸眼扩张式封隔器的设计和改进提供了理论依据。     

绿色建筑的意识形态批判

<正>如今建筑界绿色建筑、低碳城市的概念备受推崇。国家大力发展绿色经济、绿色建筑,建设低碳城市,建筑师们则一窝蜂地学习讨论与此概念相关的问题,就连以前对绿色建筑不感冒的众多开发商也开始申报LEED认证和国家绿色建筑认证。针对"绿色建筑热"一直也有批评的声音,但无论是批评者还是拥护者都认为绿色建筑虽有不足之处,可其观念是正确的,出发点是好的,绿色建筑是大势所趋。我的观点相反,绿色建筑某些细枝末节或许可取,但总体上特别在意识形态上是非常值得怀疑的。我们要把自发地追求节约,利用建筑手段改善通风、采光、保温条件,尊重环境的建筑与特定的绿色     

职业能力导向下的高职实用性体育课程改革探析——以常州信息职业技术学院为例

现行的高职体育教学多是沿用普通高等学校的课程体系,课程内容并未反映高职教育应有的教育特点,没有很好地发挥体育教学与职业教育相衔接的教学效果.通过职业能力导向下高职实用性体育课程的实施,可以很好地培养学生未来工作岗位所需要的职业体能,提高职业身体素质,从而更好地服务高职教育的发展.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Effects of different carbon sources and C/N values on nonvolatile taste components of Pleurotus eryngii

Pleurotus eryngii, the second largest industrial cultivation mushroom in China, is usually cultivated on substrates mainly consisting of sawdust and corncob. In this study, experiments were performed to determine the effects of different carbon sources and C/N values on nonvolatile taste components of P. eryngii. The effects of different carbon sources on nonvolatile taste components levels revealed that sawdust was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while corncob was beneficial to high contents of carbohydrate, polysaccharides and trehalose. At the similar C/N values, relatively higher sawdust content was beneficial to umami amino acid production, while relatively higher corncob content was beneficial to high contents of carbohydrate, polysaccharides and mannitol. Higher C/N value was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while lower C/N value was beneficial to high contents of carbohydrate, polysaccharides and trehalose. These results provided information for P. eryngii fruit body industrial cultivation to obtain specific nonvolatile taste components with high levels.     

基于滑动式切比雪夫方法的广播星历插值分析

利用滑动式切比雪夫多项式拟合卫星坐标,详细介绍滑动式切比雪夫多项式拟合原理,并通过实例对比分析普通的切比雪夫多项式和滑动式切比雪夫多项式拟合卫星坐标的精度。结果表明,滑动式切比雪夫多项式拟合卫星坐标的精度比普通的切比雪夫多项式拟合精度高,在插值端点处能够很好地克服振荡和跳跃现象。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.