排序方式: 共有16条查询结果,搜索用时 93 毫秒
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在SiO2中掺A1对Au/纳米(SiO2/Si/SiO2)/p—Si结构电致发光的影响 总被引:1,自引:0,他引:1
利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2:A1/Si/SiO2:A1)/p-Si结构,用磁控溅射制备纳米SiO2:A1时所用的SiO2/A1复合靶中的A1的面积百分比为1%。上述两种结构中Si层厚度均为1-3nm,间隔为0.2nm。为了对比研究,还制备了Si层厚度为零的样品。这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸A1作欧姆接触后,都在正向偏置下观察到电致发光(EL)。在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同。但掺A1结构的发光强度普遍比不掺A1结构强。另外,这两种结构的EL具体振荡特性有明显不同,对这两种结构的电致发光的物理机制和SiO2中掺A1的作用进行了分析和讨论。 相似文献
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InP/GaAs低温键合的新方法 总被引:4,自引:1,他引:3
通过对 InP/GaAs 异质键合实验方法的研究,提出了包括表面活化处理、真空预键合和退火热处理的三步法,在350℃低温下实现了InP/GaAs异质材料的键合。界面电流 电压(I V)特性的研究表明,350℃样品的界面过渡层极薄,电子主要以隧穿方式通过界面,而450℃的扩散使得过渡层增厚,界面电流 电压特性可视为双肖特基二极管的反向串联。同时,对键合样品也进行了拉力测试,实验结果表明 450℃样品的键合强度优于350℃样品。最后,对InP/GaAs异质材料的键合机理进行了探讨。 相似文献
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HUANG Bo LI Jing WU Yue-bo GUO Dong-hui WU Sun-tao 《半导体光子学与技术》2007,13(2):93-96
ZnO films are deposited on glass slides by radio frequency(RF) magnetron sputtering under different powers. The polycrystal structures and surface morphologies of the film are investigated. The optical transmission spectra for the ZnO films are measured within the range from 300 nm to 800 nm. The optical constants and thickness of the films are determined using a nonlinear programming method suggested by Birgin et al. The band gap of the film increases with reducing the nano-size of the film grains. The packing density of the films can be improved by reducing the RF power. 相似文献
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A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter. 相似文献