High-performance single-mode VCSELs in the 1310-nm waveband

High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20/spl deg/C-80/spl deg/C. Modulation capability at 3.2 Gb/s is demonstrated up to 70/spl deg/C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.     

Large oscillator strength excitons in PbGa2S4 crystals

Exciton states with a large oscillator strength (transverse-longitudinal splitting of 50 meV) and binding energy of 290 meV have been observed in PbGa₂S₄ crystals. The ground exciton states are stable up to the room temperature. The ground (n = 1) exciton state and two excited (n = 2 and n = 3) states of the short-wavelength B-excitons series were observed at low temperature (T = 10 K). The ground (n = 1) and the excited (n = 2) states of the long-wavelength A-exciton series were also revealed. The exciton Bohr radius of the ground exciton state was determined to be 70 Å for the A-exciton and 10 Å for the B-exciton. The band splitting and the main parameters of excitons have been determined from the calculation of the reflectivity spectra contours. The group theory analysis of the band symmetry was performed and the scheme of bands responsible for exciton transitions in the center of the Brillouin zone was proposed.     

Sorption of meso-Phenylporphyrin Iodide on Polystyrene–Bentonite Film Composites

Protection of Metals and Physical Chemistry of Surfaces - Modification of polystyrene (PS) with bentonite was carried out, and film materials with improved sorption properties toward...     

Viscosity ofp-n-alkyloxycynnamic acids and statistical thermodynamic description of the nematic phase-isotropic liquid transition

Dynamic viscosity was measured for fourp-n-alkyloxycynnamic acid homologs in the vicinity of the nematic phase-isotropic liquid transition temperature. The activation energy of viscous flow was calculated for both the nematic and isotropic phases. A statistical thermodynamic approach was used to determine the physicochemical parameters of the macroscopic equilibrium states of the liquid crystal systems. Reported at the Conf. “Liquid-Phase Systems and Nonlinear Processes in Chemistry and Chemical Technology,” Ivanovo, 1999.     

The use of immunomodulators in the surgical treatment of complicated gastric disease

While examination of 83 patients it was established that in the presence of complicated gastric and duodenal ulcer disease the secondary immune deficiency is developing, which deepens after the surgical intervention conduction. Tiotriazolin, promoting the immune system state and the blood biochemistry indexes normalization, the immune system state and the blood biochemistry indexes stimulation, hemopoiesis stimulation, the treatment results improvement, was applied for immunomodulation.     

1550 nm-band VCSEL 0.76 mW singlemode output power in 20-80/spl deg/C temperature range

Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10-80/spl deg/C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9/spl deg/ half width at half maximum has been measured on devices with 7 /spl mu/m aperture.     

Phosphorylation of cytosolic phospholipase A2 and the release of arachidonic acid in human neutrophils

Kinases mediating phosphorylation and activation of cytosolic phospholipase A2 (cPLA2) in intact cells remain to be fully characterized. Platelet-activating factor stimulation of human neutrophils increases cPLA2 phosphorylation. This increase is inhibited by PD 98059, a mitogen-activated protein (MAP)/extracellular signal-regulating kinase (erk) 1 inhibitor, but not by SB 203580, a p38 MAP kinase inhibitor, indicating that this action is mediated through activation of the p42 MAP kinase (erk2). However, platelet-activating factor-induced arachidonic acid release is inhibited by both PD 98059 and SB 203580. Stimulation by TNF-alpha increases cPLA2 phosphorylation, which is inhibited by SB 203580, but not PD 98059, suggesting a role for p38 MAP kinase. LPS increases cPLA2 phosphorylation and arachidonic acid release. However, neither of these actions is inhibited by either PD 98059 or SB 203580. PMA increases cPLA2 phosphorylation. This action is inhibited by PD 98059 but not SB 203580. Finally, FMLP increases cPLA2 phosphorylation and arachidonic acid release. Interestingly, while the FMLP-induced phosphorylation of cPLA2 is not affected by the inhibitors of the p38 MAP kinase or erk cascades, both inhibitors significantly decrease arachidonic acid release stimulated by FMLP. SB 203580 or PD 98059 has no inhibitory effects on the activity of coenzyme A-independent transacylase.     

1.55-/spl mu/m optically pumped wafer-fused tunable VCSELs with 32-nm tuning range

We demonstrate widely tunable InAlGaAs-InP-AlGaAs-GaAs optically pumped vertical-cavity surface-emitting lasers operating in the 1.55-/spl mu/m waveband. The tuning range of 32 nm is achieved by applying a low tuning voltage of 4 V. Maximum single-mode output power of 2 mW with less than 1.5-dB power variation over the whole tuning range and side-mode suppression ratio in excess of 30 dB have been obtained.     

30°C CW operation of 1.52 μm InGaAsP/AlGaAs vertical cavitylasers with in situ built-in lateral current confinement by localisedfusion

1.52 μm double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in situ built-in lateral current confinement were fabricated using a localised wafer fusion process. A threshold current of 2.5 mA at 4 V was obtained for devices with a 10×10 μm² current aperture. These devices operate CW up to 30°C. The width of the dominant mode is less than 0.1 nm and the sidemode suppression ratio is 30 dB