Visible (660 nm) resonant cavity light-emitting diodes

The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).<>     

Tapered rib adiabatic following fiber couplers in etched GaAsmaterials for monolithic spot-size transformation

Design details and demonstration data are presented for an (Al,Ga)As monolithic tapered rib waveguide achieving modal spot-size transformation. The tapered rib adiabatic following fiber coupler structure (TRAFFIC) achieves two-dimensional (2-D) expansion of the output optical mode of single-transverse-mode semiconductor waveguide modulators and lasers using a one-dimensional (1-D) taper between noncritical initial and final taper widths which are compatible with optical lithographic techniques. Measurements are presented of total mode expansion losses between ~1.5-2.0 dB and semiconductor to single-mode-fiber waveguide coupling losses of ~0.5-1.0 dB for doped pin optical-modulator-type waveguides using the TRAFFIC waveguide. A semiconductor laser with a TRAFFIC tapered-rib mode-expansion section and measured coupling loss between the laser output and single-mode fiber of only 0.9 dB is described. Finally, a TRAFFIC Spot-size transformer for undoped waveguide modulators with total mode expansion losses of 1.84 dB and excellent modal behavior at 1.32-μm wavelength is presented. The TRAFFiC structure is particularly well suited for integration with both active and passive etched rib waveguide devices. Fabrication is relatively simple, requiring only patterning and etching of the tapered waveguide and uniform-width outer mesa waveguide without any epitaxial regrowth     

Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVD

GaAs/AlGaAs vertical-cavity top-surface-emitting lasers (VCSELs) with a continuously graded mirror composition have been grown by MOCVD, and planar devices with proton-implant current confinement have been characterized. Continuous grading of the heterointerfaces in the Bragg reflectors eliminated the energy-band discontinuities, thus improving carrier transport and resulting in a substantial reduction in the series resistance and threshold voltage of the laser diodes. These VCSELs have excellent room-temperature CW electrical characteristics, including some of the lowest series resistances, highest power efficiencies and lowest operating voltages ever reported.<>     

The RF performance of long junction active devices using TlCaBaCuOstep edge structures

The authors report the fabrication of long, step-edge junctions using TlCaBaCuO with associated control lines that demonstrate strong modulation of critical current, usable current gains, large power gains, and fairly large bandwidths. The devices are operational at up to 95 K and RF measurements have been made at 77 K at frequencies up to a probe-limited 10 GHz. These four terminal devices have output impedances of 2-20 Ω, small signal current gains greater than 2.5, available power gains of over 10 dB from 0.5 to 10 GHz, and minimum noise figures of less than 1 dB     

Vasopressin fragment, AVP-(4-8), improves long-term and short-term memory in the hole board search task

To investigate the neurotoxicity of acetaldehyde covalent adducts, immunohistochemical staining for acetaldehyde adducts using the antibody against acetaldehyde adducts, was performed in the cerebral cortex of ethanol-fed (withdrawal) mice. In the ethanol-fed mice, the degeneration in the cerebral cortex was found, while the protein epitope related to acetaldehyde was found in the cerebral cortex, liver and adrenal cortex. No histochemical and immunohistochemical changes in the tissues from the control mice were found. It is possible that acetaldehyde adducts may effect on the cerebral cortex as the neurotoxicity which cause psychosis such as delirium and hallucination after alcohol drinking.     

Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction

Monolithic, multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) arrays have been obtained by the surface-controlled enhancement and reduction of the MOCVD epitaxial growth rate, achieving a periodic, graded wavelength span greater than 30 nm. Room-temperature (RT), electrically pumped continuous-wave (CW) lasing is demonstrated, with uniform threshold currents of 5.5/spl plusmn/0.5 mA with typical output powers of 0.5 mW. We show here for the first time both the enhancement and the reduction of the growth rate of the entire VCSEL structure and demonstrate the controlled variation of the VCSEL lasing wavelength over a widened spectral range by exploiting both effects.     

Inverting and latching optical logic gates based on the integrationof vertical-cavity surface-emitting lasers and photothyristors

Inverting optical logic gates based on the monolithic integration of a vertical-cavity surface-emitting laser (VCSEL) with a heterojunction photothyristor (PNPN) are described. Logic functions INVERT, NAND, and NOR are experimentally demonstrated for the first time using latchable and cascadable PNPN/VCSEL switches, which can be triggered with very low optical energy, while producing high optical gain and optical contrast. These gates are integrable on a single epitaxial structure to provide multifunctional logic and memory arrays     

Dry etching of GaN and related materials: comparison of techniques

The etch rates and feature anisotropy for GaN, AlN, and InN etched in Cl₂-Ar plasmas with four different techniques were examined. Conventional reactive ion etching produces the slowest etch rates, even when high dc self-biases (>-900 V) are employed, and this leads to mask erosion and sloped feature sidewalls during ridge waveguide fabrication. Two high-ion-density techniques, inductively coupled plasma and electron cyclotron resonance, provide the highest etch rates and most anisotropic features through their combination of high-ion flux and moderate-ion energy. Etch selectivities of GaN to AlN and InN are typically ⩽4 in these tools. Reactive ion beam etching utilizing a high density (ICP) source is also an attractive option for pattern transfer in the nitrides, although its etch rates are slower than for ICP or ECR due to its lower operating pressure     

DEMONSTRATION CONCEPTS FOR WESTERN UNITED STATES OIL SHALES

A logical next step in verifying the viability of emerging oil shale technologies in the United States is an engineering-scale demonstration. A joint industry-government study recently completed for a proof-of-concept demonstration at Colorado Tract C-b revealed the cost and benefits of such a demonstration using modified in situ (MIS), circulating fluidized bed combustion (CFBC) and above ground retorting (AGR) processes. A partnership between industry and local, state, and federal governments is being proposed to carry out the program.

An array of surface retorting technologies are potential candidates for demonstration. The MIS technology is one of very few in situ technologies ready for demonstration, and it is uniquely suited for the deep thick oil shale in the center of Colorado's Picear.ce Basin. The proof-of-concept demonstration approach provides distinct advantages over proceeding directly to commercial scale.