Oxidation of doped europium in BaMgAl10O17 by annealing studied by x‐ray‐absorption fine‐structure measurements

Abstract— We studied the influence of annealing in air on doped europium in BaMgAl₁₀O₁₇ by performing x‐ray absorption fine‐structure measurements. We determined the oxidation of doped divalent europium by annealing in air at over 500°C. The interatomic distance between the europium and the surrounding oxygen atoms was compressed by oxidation. It also appears that the oxidation process of europium is determined by the diffusion of oxygen into BaMgAl₁₀O₁₇.     

Color registration error reduction method compensating the influence of belt thickness variation in electrophotographic process

This paper proposes a new belt drive control method for reducing a belt velocity-fluctuation that is caused by a belt thickness-variation in the circumferential direction. A belt driving system performs feedback control with a rotary encoder-output mounted on a driven roller. This proposed method correct the reference value of the feedback control for the purpose of the belt velocity regulation. The correction includes two steps. The first step acquires the encoder-output of the driven roller and calculates the rotational angular velocity-fluctuation with one cycle of the belt rotation. The second step converts from the velocity-fluctuation to the correction value of the feedback reference. The correction value cancels a detection error of the driven roller caused by the belt thickness-variation. After these steps, the belt driving system controls the belt velocity as compensating the belt velocity-fluctuation. Experimental result showed the significant fluctuation reduction on a typical tandem-engine printer.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

High performance liquid chromatographic separation of stereoisomeric bile acids as their UV-sensitive esters

High performance liquid chromatographic separation of a series of mono-, di- and trihydroxylated 5β-cholanic acids which differ only in position and configuration of hydroxyl groups at positions C-3, C-7 and/or C-12, is reported. The C-24 free acids were derivatized to four different classes of UV-sensitive esters, i.e.,p-bromophenacyl (BP),m-methoxyphenacyl (MP), 4-nitrophthalimidemethyl (NPM) and 9-anthrylmethyl (AM) esters, and chromatographed on two, variants of C₁₈ reversed-phase columns (Nova-Pak C₁₈ and Zorbax ODS) with methanol-water systems as mobile phase. Separation efficiency and elution order of some isomeric pairs were influenced by both the structure of the C-24 ester groups and the nature of the columns used. Excellent chromatographic properties were found for those derivatives, particularly for the NPM esters.     

Mean molal activity coefficients of aqueous scandium chloride, nitrate, bromide and perchlorate solutions at 25.0°

The mean molal activity coefficients of aqueous scandium chloride, nitrate, bromide and perchlorate solutions were determined at 25.0° for dilute to saturated concentrations, together with the activities of water. In the dilute solutions of scandium halides, the activity coefficients were obtained from electromotive force measurements on galvanic cells, and the osmotic coefficients of all four solutions above 0.1 mol kg⁻¹ were determined from the isopiestic measurements. Least-squares equations were fitted to these coefficients, which were then used to calculate the mean molal activity coefficients and water activities. The relationships between these results and the corresponding activity data for other rare earth salts, and to the cation hydration and ionic interactions, are discussed. The results on scandium perchlorate solutions suggested that the inner-sphere hydration number of tervalent scandium ion may be seven.     

Enhancing heat transfer ability of drag reducing surfactant solutions with static mixers and honeycombs

Solutions containing drag reducing additives also show reduced heat transfer which limits their use in district heating and cooling recirculation systems where heat exchange is critical. In this study, static mixers A and B and honeycombs were installed at the entrance to a heat exchanger to break the solution microstructure temporarily and thereby enhancing their heat transfer ability when passing through the heat exchanger. The effectiveness of the destructive devices in enhancing the heat transfer ability of drag reducing cationic and mixed zwitterionic/anionic surfactant solutions was investigated together with the microstructure recovery time and pressure drop penalty paid for the heat transfer enhancement.     

The effects of 18 alpha,beta-glycyrrhetinic acid on the hormonal induction of tyrosine aminotransferase in rat primary cultured hepatocytes

Complementary medicine (CM) is popular with patients but physicians do not feel at ease with this situation and some fear that the patient might be the loser. Their fear is based on the perception that some CM practitioners have dubious qualifications and competence and that too little is known about the efficacy and safety of many complementary therapies. It follows that, in the interest of the patient and all other parties involved, we urgently need more and better research to fill the void. Integration of complementary medicine into mainstream care requires a minimum of essential evidence. As in all areas of medicine, there can be no short cut to rigorous research.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.