An innovative design of spin transfer torque based ternary content addressable memory with match line sense amplifier

Ternary Content Addressable Memory (TCAM) device is integrated with Static-Random Access Memory unit to attain high production at a lesser cost. Moreover, the TCAM searching device performs faster parallel searching of whole memory in the entire time. Also, TCAM is constrained by its large area of the cell, extensive active state leakage current, and high power consumption for searching. In this present work, an innovative Spin Transfer Torque-TCAM (STT-TCAM) with Match Line Sensing Amplifier sensing scheme is developed to acquire trustworthy sensing functions with high speed. The projected scheme has pertained minimum consumption of power and high operating speed. The proposed method consumes a lesser amount of power and functions at a higher speed. It also exploits the least number of resources compared to the prevailing techniques. The proposed designing is done with the use of Xilinx vertex 6 simulation tools and it calculated the power, current, voltage, frequency and delay values used in this simulation. Hence, the attained parameters are compared with recent existing methods to prove the efficacy of the proposed TCAM model.