温度对变压器绝缘缺陷影响规律的分析及验证

本文中作者研究了温度对油浸式变压器绝缘纸老化水平的影响,开展了频域介电谱测试得出不同的试验温度下绝缘纸的电导率频域谱.推导了温度、电导率和相对介电常数之间的作用情况,并进行实例验证.     

VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

5G核心网业务模型的智能化预测研究

摘 要：核心网业务模型的建立是5G网络容量规划和网络建设的基础，通过现有方法得到的理论业务模型是静态不可变的且与实际网络存在偏离。为了克服现有5G核心网业务模型与现网模型适配性较差以及规划设备无法满足用户实际业务需求的问题，提出了一种长短期记忆（long short-term memory，LSTM）网络与卷积LSTM （convolution LSTM，ConvLSTM）网络双通道融合的 5G 核心网业务模型预测方法。该方法基于人工智能（artificial intelligence，AI）技术以实现高质量的核心网业务模型的智能预测，形成数据反馈闭环，实现网络自优化调整，助力网络智能化建设。     

智慧标识网络服务机理研究进展及安全性分析

随着互联网规模的不断扩大以及应用场景的多元化,传统网络无法很好地满足新业务的动态多样化需求,因此国内外对未来网络展开了深入研究.本文首先介绍了未来互联网体系架构的研究现状.其次,介绍了具备"三层、两域"特征的智慧标识网络(Smart Identifier NETwork,SINET)体系架构,然后重点阐述了SINET服务机理在服务的命名与解析、路由机制、服务缓存、移动性、传输控制机制、可扩展性、绿色节能等关键技术方面取得的研究进展,并进一步详细分析了SINET服务机理的安全性.最后总结了SINET面临的挑战,对SINET服务机理在大规模场景部署中可能存在的问题做出讨论.     

Optical design of the Lyman alpha based beam emission spectroscopy(LAB)diagnostic on the HL-2A tokamak

In this article, we present the optical design of a novel diagnostic on the HL-2 A tokamak, i.e. the20-channel edge Lyman-alpha beam emission spectroscopy, which is a promising solution for edge density turbulence research on tokamaks, as it offers the possibility of density fluctuation measurement with a 3.3 mm spatial resolution while maintains a high temporal resolution of1 μs. The optical path, including the reflective collection optics, the high-dispersion spectrometer, and the linear detector array, is carefully optimized to obtain a good image quality and a high throughput. The maximum root mean square radius of the collection optics is 64 μm.The detected photon flux is estimated to be about 10~(11) photons/s/channel.     

矢量语音传感器微阵列

人工智能的普及促进了语音交互技术的发展,语音传感器阵列作为智能语音交互的硬件前端,成为语音交互领域的前沿研究方向.矢量语音传声器自有的偶极子指向性、零点深度以及阵列体积小便于集成的特点特别符合语音交互技术对硬件设备的要求.基于此,通过采用两组矢量敏感单元"共点正交"形成矢量微阵列实现声源空间锐化波束指向,其不受瑞利限与空间采样率限制,与传统空间离散分布的声压麦克风阵列有着本质区别,是矢量微阵列的核心优势所在.矢量微阵列传声器弥补了现有双麦阵列的不足,具有更为广阔的应用前景,作为智能语音交互的硬件前端,对推动智能语音交互领域的发展具有重要意义.     

Strong tribocatalytic dye degradation by tungsten bronze Ba4Nd2Fe2Nb8O30

The triboelectric effect has recently demonstrated its great potential in environmental remediation and even new energy applications for triggering a number of catalytic reactions by utilizing trivial mechanical energy. In this study, Ba₄Nd₂Fe₂Nb₈O₃₀ (BNFN) submicron powders were used to degrade organic dyes via the tribocatalytic effect. Under the frictional excitation of three PTFE stirring rods in a 5 mg/L RhB dye solution, BNFN demonstrates a high tribocatalytic degradation efficiency of 97% in 2 h. Hydroxyl radicals (?OH) and superoxide radicals (?O₂－) were also detected during the catalysis process, which proves that triboelectric energy stimulates BNFN to generate electron-hole pairs. The tribocatalysis of tungsten bronze BNFN submicron powders provides a novel and efficient method for the degradation of wastewater dye by utilizing trivial mechanical energy.     

高分子材料导热性能影响因素研究进展

介绍了高分子材料导热性能影响因素研究进展，重点阐释了聚合物基体的结构特性（链结构、分子间相互作用、取向、结晶度等）、导热填料（种类、含量、形态、尺寸等）以及制备方法等对高分子材料导热性能的影响。     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.