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Si-Ge interdiffusion in Si1-xGex/Si multiple quantum-wells (MQW) is investigated by photocurrent spectroscopy, which is induced by ion implantation of Si+ and thermal annealing. The band gap energy of the Si1-xGex/Si samples implanted plus annealed has a blue shift up to 97meV compared to the annealed-only samples. The blue shift may be caused by the SiGe interdiffusion and the relaxation of the SiGe quantum wells. 相似文献
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